000			02983nam a22004333i 4500
001			EBC5338881
003			MiAaPQ
005			20240724113110.0
006			m o d |
007			cr cnu||||||||
008			240724s2017 xx o ||||0 eng d
020			_a9789674611231 _q(electronic bk.)
020			_z9789674611385
035			_a(MiAaPQ)EBC5338881
035			_a(Au-PeEL)EBL5338881
035			_a(CaPaEBR)ebr11540395
035			_a(OCoLC)1031337703
040			_aMiAaPQ _beng _erda _epn _cMiAaPQ _dMiAaPQ
050		4	_aTK7871.15.S56 .C443 2017
082	0		_a621.38152
100	1		_aCheah, Sook Fong.
245	1	0	_aFabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.
250			_a1st ed.
264		1	_aGelugor : _bPenerbit USM, _c2017.
264		4	_c©2017.
300			_a1 online resource (65 pages)
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
505	0		_aCover -- Half Title Page -- Title Page -- Copyright Page -- Contents -- List of Tables -- List of Figures -- List of Symbols -- Preface -- List of Abbreviations -- 1 Introduction -- 2 Overview of the Fabrication of Porous GaN via Wet Etching Method -- 2.1 Chemical etching -- 2.2 Anodic etching -- 2.3 Metal-assisted electroless etching -- 2.4 UV-assisted photoelectrochemical etching -- 3 Attenuated Total Reflection Study of Porous Semiconductor -- 4 Methodology -- 4.1 Sample preparation -- 4.2 Experimental set-up for electrochemical etching approach -- 4.3 Characterizations -- 4.3.1 FESEM measurement -- 4.3.2 Polarized IR-ATR Measurement -- 4.3.3 PL measurement -- 4.3.4 ATR curve fitting -- 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films -- 5.1 FESEM analysis -- 5.2 p-polarized ATR study -- 5.3 PL analysis -- 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 6.1 FESEM analysis -- 6.2 p-polarized ATR study -- 6.3 PL analysis -- 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 7.1 FESEM analysis -- 7.2 p-polarized ATR study -- 8 Conclusion -- Appendix -- References -- Index -- Back Cover.
588			_aDescription based on publisher supplied metadata and other sources.
590			_aElectronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
650		0	_aSilicon carbide.
655		4	_aElectronic books.
700	1		_aNg, Sha Shiong.
776	0	8	_iPrint version: _aCheah, Sook Fong _tFabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method _dGelugor : Penerbit USM,c2017 _z9789674611385
797	2		_aProQuest (Firm)
856	4	0	_uhttps://ebookcentral.proquest.com/lib/orpp/detail.action?docID=5338881 _zClick to View
999			_c869 _d869