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| 050 | 4 | _aTK7871.15.S56 -- .S555 2014eb | |
| 082 | 0 | _a620.1/93 | |
| 100 | 1 | _aOkumura, Hajime. | |
| 245 | 1 | 0 | _aSilicon Carbide and Related Materials 2013. |
| 250 | _a1st ed. | ||
| 264 | 1 |
_aZurich : _bTrans Tech Publications, Limited, _c2014. |
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| 264 | 4 | _c©2014. | |
| 300 | _a1 online resource (1252 pages) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 490 | 1 |
_aMaterials Science Forum Series ; _vv.Volumes 778-780 |
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| 505 | 0 | _aIntro -- Silicon Carbide and Related Materials 2013 -- Preface, Committees, Sponsors and Overview -- Table of Contents -- Chapter 1: SiC Bulk Growth -- 1.1 PVT and CVD -- Open Issues in SiC Bulk Growth -- Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography -- Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation -- Development of RAF Quality 150mm 4H-SiC Wafer -- Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth -- Effect of TaC-Coated Crucible on SiC Single Crystal Growth -- Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT -- Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT -- Spiral Step Dissociation on PVT Grown SiC Crystals -- Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis -- Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique -- 4H-SiC Bulk Growth Using High-Temperature Gas Source Method -- Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method -- Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method -- 1.2 Solution Growth -- Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC -- Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent -- Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach -- Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity -- Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents. | |
| 505 | 8 | _aChapter 2: SiC Epitaxial Growth -- 2.1 Homoepitaxial Growth -- Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques -- Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density -- Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications -- Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle -- Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor -- C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput -- Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor -- Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation -- 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106 -- Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate -- Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate -- Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT -- Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer -- Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates -- An Approach to Trace Defects Propagation during SiC Epitaxy -- Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers -- Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply -- Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates. | |
| 505 | 8 | _a50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor -- Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method -- Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates -- Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling -- Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers -- Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect -- Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate -- 4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate -- Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth -- First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface -- Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates -- HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices -- Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System -- Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements -- Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer -- 2.2 Heteroepitaxial Growth -- Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate -- The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC -- 3C-SiC Seeded Growth on Diamond Substrate by VLS Transport -- Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates -- Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere -- A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures. | |
| 505 | 8 | _aFormation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates -- Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition -- Chapter 3: Physical Properties and Characterization of SiC -- 3.1 Intrinsic Point Defetcs and Carrier Lifetime -- Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition -- Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures -- Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC -- Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence -- Identification of Structures of the Deep Levels in 4H-SiC -- Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS -- Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations -- Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy -- Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC -- Diffusion of Alkali Metals in SiC -- Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD -- On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates -- 3.2 Extended Defects -- Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy -- Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers -- Polarized Photoluminescence from Partial Dislocations in 4H-SiC -- Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers. | |
| 505 | 8 | _aMeasurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography -- Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer -- Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation -- Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging -- Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method -- TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC -- Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers -- Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching -- Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal -- Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy -- Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing -- Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography -- Micro-Raman Characterization of 4H-SiC Stacking Faults -- Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers -- Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide -- Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate -- Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer -- Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography -- Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy. | |
| 505 | 8 | _a3.3 Surface and Interface. | |
| 520 | _aSelected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. | ||
| 588 | _aDescription based on publisher supplied metadata and other sources. | ||
| 590 | _aElectronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. | ||
| 655 | 4 | _aElectronic books. | |
| 700 | 1 | _aHarima, Hiroshi. | |
| 700 | 1 | _aKimoto, Tsunenobu. | |
| 700 | 1 | _aYoshimoto, Masahiro. | |
| 700 | 1 | _aWatanabe, Heiji. | |
| 700 | 1 | _aHatayama, Tomoaki. | |
| 700 | 1 | _aMatsuura, Hideharu. | |
| 700 | 1 | _aFunaki, Tsuyoshi. | |
| 700 | 1 | _aSano, Yasuhisa. | |
| 776 | 0 | 8 |
_iPrint version: _aOkumura, Hajime _tSilicon Carbide and Related Materials 2013 _dZurich : Trans Tech Publications, Limited,c2014 _z9783038350101 |
| 797 | 2 | _aProQuest (Firm) | |
| 830 | 0 | _aMaterials Science Forum Series | |
| 856 | 4 | 0 |
_uhttps://ebookcentral.proquest.com/lib/orpp/detail.action?docID=1910707 _zClick to View |
| 999 |
_c45471 _d45471 |
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