Active-Matrix Organic Light-Emitting Display Technologies.
Material type:
- text
- computer
- online resource
- 9781681081205
- 621.38152200000002
- TK7871.89.L53 -- .A285 2014eb
Intro -- CONTENTS -- PREFACE -- LIST OF CONTRIBUTORS -- Introduction to Organic Light-Emitting Display Technologies -- INTRODUCTION -- DEVELOPEMNT HISTORY OF OLEDS -- BASIC PHYSICS OF OLEDS -- Charge Carriers Injection -- Charge Carriers Transportation -- Exciton Formation and Recombination -- Light Extraction from Devices -- FABRICATION AND CHARACTERIZATION OF OLEDS -- APPLICATION OF OLEDS -- Flat Panel Display -- Solid-state Lighting -- CONFLICT OF INTEREST -- ACKNOWLEDGMENTS -- REFERENCES -- White Organic Light-Emitting Diodes for Display and Lighting Application -- WOLEDS FOR FULL COLOR DISPLAYS -- WOLEDS FOR SOLID-STATE LIGHTING -- APPROACHES TO WHITE LIGHT EMISSION -- Multi-emissive Layers -- Single-emissive Layer -- WOLEDs with Fluorescent-phosphorescent Hybrid Emitters -- Tandem WOLEDs -- Side by Side WOLEDs -- Color Converted WOLEDs -- Excimer/Exciplex WOLEDs -- CONFLICT OF INTEREST -- ACKNOWLEDGMENTS -- REFERENCES -- Light Outcoupling Technologies -- INTRODUCTION -- LIGHT DISTRIBUTION IN OLED -- EXTERNAL EXTRACTION STRUCTURES -- Truncated Square-pyramid Luminaire -- Scattering Film -- Sand-blasting Substrate -- Microlens Array -- INTERNAL EXTRACTION STRUCTURES -- Internal Scattering Layer -- Photonic Crystal Structure -- Metal Nanoparticles -- CONCLUSION -- CONFLICT OF INTEREST -- ACKNOWLEDGEMENTS -- REFERENCES -- Encapsulation Technologies -- INTRODUCTION -- DARK SPOTS FORMATION MECHANISM -- REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES -- TRADITIONAL ENCAPSULATION TECHNOLOGY -- THIN FILM ENCAPSUTION TECHNOLOGY -- Si3N4/SiO2 Multilayer -- Organic/Inorganic Multilayer -- Atomic Layer Deposited (ALD) Film -- CONCLUSION -- CONFLICT OF INTEREST -- ACKNOWLEDGEMENTS -- REFERENCES -- Thin Film Transistor Technology -- INTRODUCTION -- HISTORY OF THIN FILM TRANSISTORS -- HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY.
LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY -- SPC Technology -- MIC Technology -- ELA Technology -- Bridge Grain Technology -- METAL OXIDE SEMICONDUCTOR TFTS -- Zinc Oxide TFTs -- Amorphous Oxide Semiconductors and TFTs -- Zinc Tin Oxide -- Indium Gallium Oxide -- Indium Gallium Zinc Oxide -- GaN TFTs -- MoS2 TFTs -- SUMMARY -- CONFLICT OF INTEREST -- ACKNOWLEDGEMENTS -- REFERENCES -- Driving Schemes and Design Considerations for AMOLED -- CIRCUIT FUNDAMENTALS -- Resistor-Capacitor Circuit -- Charging and Discharging RC Circuit -- Capacitive Parasitics -- TFT CIRCUIT CONSIDERATIONS -- Operational Region -- Transistor as a Switch -- Transistor as a Current Source or Current Drain -- On Resistance -- Approximation of TFT with an equivalent resistance -- DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE -- Brightness -- Display Timing -- Pixel Storage Capacitance -- Design Expression -- TFT CIRCUIT DESIGN TECHNIQUES -- Bootstrap Circuit -- CIRCUIT COMPENSATION AND LAYOUT DESIGN -- CHALLENGE IN AMOLED DISPLAYS -- Aging of OLED and TFT -- Threshold Voltage Shift -- 2T1C Pixel Configuration -- THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL -- 3T1C Pixel Configuration -- 4T1C Pixel Configuration -- 5T2C Pixel Configuration -- 6T1C Pixel Configuration -- 6T1C Pixel Configuration with biased discharge method -- CONFLICT OF INTEREST -- ACKNOWLEDGEMENTS -- REFERENCES -- SUBJECT INDEX.
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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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