Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.

Cover -- Half Title Page -- Title Page -- Copyright Page -- Contents -- List of Tables -- List of Figures -- List of Symbols -- Preface -- List of Abbreviations -- 1 Introduction -- 2 Overview of the Fabrication of Porous GaN via Wet Etching Method -- 2.1 Chemical etching -- 2.2 Anodic etching -- 2.3 Metal-assisted electroless etching -- 2.4 UV-assisted photoelectrochemical etching -- 3 Attenuated Total Reflection Study of Porous Semiconductor -- 4 Methodology -- 4.1 Sample preparation -- 4.2 Experimental set-up for electrochemical etching approach -- 4.3 Characterizations -- 4.3.1 FESEM measurement -- 4.3.2 Polarized IR-ATR Measurement -- 4.3.3 PL measurement -- 4.3.4 ATR curve fitting -- 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films -- 5.1 FESEM analysis -- 5.2 p-polarized ATR study -- 5.3 PL analysis -- 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 6.1 FESEM analysis -- 6.2 p-polarized ATR study -- 6.3 PL analysis -- 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 7.1 FESEM analysis -- 7.2 p-polarized ATR study -- 8 Conclusion -- Appendix -- References -- Index -- Back Cover.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.