Basic Principles of Electronics : Volume 2: Semiconductors.

Front Cover -- Semiconductors -- Copyright Page -- Table of Contents -- Dedication -- PREFACE -- CHAPTER 1. CONDUCTION IN THE SOLID STATE -- 1.1. HISTORICAL -- 1.2. "VACANCIES" IN CRYSTALS -- 1.3. DRUDE'S THEORY OF METALLIC CONDUCTION -- 1.4. THE PARADOX -- 1.5. MEAN FREE TIME -- QUESTIONS -- CHAPTER 2. CONDUCTION AND HEAT -- 2.1. SOME KINETIC THEORY -- 2.2. THE MEAN FREE PATH -- 2.3. THE JOULE HEATING EFFECT -- 2.4. THE FAILURE OF DRUDE'S THEORY -- 2.5. THE WORK OF WIEN -- 2.6. THE MODERN PICTURE OF RESISTIVITY -- 2.7. THE EFFECT OF TEMPERATURE ON THE CONDUCTIVITY -- QUESTIONS -- CHAPTER 3. SEMICONDUCTORS -- 3.1. HISTORICAL -- 3.2. CLASSIFICATION OF MATERIALS -- 3.3. ELECTRONS AND HOLES -- 3.4. EXTRINSIC OR IMPURITY SEMICONDUCTORS -- QUESTIONS -- CHAPTER 4. SEMICONDUCTOR TECHNOLOGY AND SIMPLE DEVICES -- 4.1. TERMINOLOGY -- 4.2. CRYSTAL PREPARATION -- 4.3. THE MATERIALS IN USE -- 4.4. PHOTOCONDUCTORS -- 4.5. THE HALL EFFECT: MAGNETOMETERS -- 4.6. THERMOELECTRIC SEMICONDUCTORS -- 4.7. THERMISTORS -- 4.8. STRAIN GAUGES -- QUESTIONS -- CHAPTER 5. THE p-n JUNCTION -- 5.1. SEMICONDUCTOR JUNCTIONS -- 5.2. DIFFUSION IN A SEMICONDUCTOR -- 5.3. THE POTENTIAL BARRIER -- 5.4. THE p-n JUNCTION WITH FORWARD AND REVERSE BIAS -- 5.5. THE RESISTANCE OF A p-n JUNCTION -- QUESTIONS -- CHAPTER 6. p-n JUNCTION DEVICES -- 6.1. PRACTICAL JUNCTIONS -- 6.2. RECTIFIERS -- 6.3. DIODES -- 6.4. COMPARISON OF p-n JUNCTION DIODES WITH THERMIONIC VALVE DIODES -- 6.5. THE VARACTOR DIODE -- 6.6. THE ZENER DIODE -- 6.7. PHOTOCELLS -- QUESTIONS -- CHAPTER 7. THE TRANSISTOR -- 7 1. THE PRINCIPLE OF THE JUNCTION TRANSISTOR -- 7.2. THE CURRENT GAIN, α -- QUESTIONS -- CHAPTER 8. TRANSISTOR PRODUCTION AND CHARACTERISTICS -- 8.1. TRANSISTOR PRODUCTION -- 8.2. TRANSISTOR CHARACTERISTICS -- QUESTIONS -- CHAPTER 9. THE TRANSISTOR AS A CIRCUIT ELEMENT.

9.1. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON BASE -- 9.2. AMPLIFICATION IN COMMON BASE CONNECTION -- 9.3. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON EMITTER -- 9.4. THE COMMON EMITTER AMPLIFIER -- 9.5. DETERMINATION OF PARAMETERS FROM TRANSISTOR CHARACTERISTICS -- 9.6. THE LOAD LINE -- 9.7. BIAS CIRCUITS -- 9.8. DESIGN OF A BIAS CIRCUIT -- 9.9. ALTERNATIVE TRANSISTOR CONFIGURATIONS -- QUESTIONS -- CHAPTER 10. COMMON TRANSISTOR CIRCUITRY -- 10.1. MULTI-STAGE AMPLIFIERS -- 10.2. POWER OUTPUT STAGES -- 10.3. TUNED AMPLIFIERS -- 10.4. OSCILLATORS -- 10.5. THE TRANSISTOR SWITCH -- 10.6. D.C. AMPLIFIERS -- 10.7. INVERTERS -- QUESTIONS -- CHAPTER 11. SPECIAL DEVICES, PROCESSES AND USES -- 11.1. HETEROJUNCTIONS -- 11.2. SONAR AMPLIFIER -- 11.3. RADIATION DETECTION -- 11.4. POWER CONTROL -- 11.5. MICROWAVE DEVICES -- 11.6. OPTO-ELECTRONICS -- 11.7. THE UNIJUNCTION -- 11.8. FIELD EFFECT TRANSISTORS -- 11.9. MICROELECTRONICS -- QUESTIONS -- APPENDIX I: THE h-PARAMETERS -- APPENDIX II: RELATIONSHIP BETWEEN h AND T PARAMETERS FOR COMMON EMITTER CONFIGURATION -- APPENDIX III: INPUT AND OUTPUT RESISTANCES AND GAINS FOR GROUNDED EMITTER TRANSISTOR, IN TERMS OF h-PARAMETERS -- APPENDIX IV: CLASSIFICATION OF SEMICONDUCTOR TYPES -- APPENDIX V: PRACTICAL PRECAUTIONS WITH TRANSISTORS -- APPENDIX VI: SYMBOLS USED IN THE TEXT -- APPENDIX VII: IMPURITY SEMICONDUCTORS -- BIBLIOGRAPHY -- INDEX TO SECTIONS.

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