Handbook of Graphene, Volume 2 : Physics, Chemistry, and Biology.
- 1st ed.
- 1 online resource (684 pages)
Cover -- Title Page -- Copyright Page -- Contents -- Preface -- 1 Topological Design of Graphene -- 1.1 Introduction -- 1.2 Topological Design for Engineering Strength, Morphology, and Toughness of Graphene -- 1.2.1 Tuning Strength of Graphene via GBs -- 1.2.2 Topological Design for 3D Shapes of Graphene -- 1.2.3 Topological Design for Toughening Graphene -- 1.3 Applications of Topologically Designed Graphene -- 1.3.1 Topologically Designed Graphene Flake to Guide the Growth of Single-Walled Carbon Nanotube (SWCNT) -- 1.3.2 Topologically Designed Graphene for Novel Energy-Related Applications -- 1.3.3 Topologically Designed Graphene for Multifunctional Materials -- 1.3.4 Topologically Designed Graphene for Biological Applications -- 1.4 Fabrication Techniques of Topologically Designed Graphene -- 1.5 Outlook -- References -- 2 Graphene at the Metal-Oxide Interface: A New Approach to Modify the Chemistry of Supported Metals -- 2.1 Introduction -- 2.2 Fabrication of Model Metal/Graphene/Oxide Samples -- 2.3 Effect of Graphene on the Cobalt-Oxide Support Interaction -- 2.3.1 Studies under UHV Conditions -- 2.3.2 Physicochemical Studies under Gas Atmospheres -- 2.4 Effect of Graphene on the PtCo-Oxide Support Interaction -- 2.4.1 Studies under UHV Conditions -- 2.4.2 Physicochemical Studies under O2/H2 Gas Atmospheres -- 2.4.3 Preparation and Testing of Powder PtCo/Graphene/ZnO -- 2.5 Stability of Graphene -- 2.6 Conclusions and Perspectives -- References -- 3 The Combinatorial Structure of Graphene -- 3.1 Basic Definitions and Results -- 3.1.1 Relations Among the Basic Parameters -- 3.1.2 Kekulé Structures and the Clar and Fries Numbers -- 3.1.3 Coloring Structures -- 3.2 Kekulé Structures -- 3.2.1 Sachs Approach -- 3.2.2 Kekulé Structures Giving the Clar and Fries Numbers. 3.2.3 Pairwise Incompatibility of the Kekulé, Fries, and Clar Numbers for Benzenoids -- 3.2.4 Doping and Kekulé Structures -- 3.3 Internal Defects -- 3.3.1 Internal Kekulé Structures -- 3.3.2 General Patches -- 3.3.3 Clusters -- 3.4 Curvature -- 3.4.1 Curvature and Growth -- 3.4.2 Cones -- 3.4.3 Curvature 6 -- 3.4.4 Ruffles -- 3.4.5 0-Curvature Clusters and Flatness -- 3.4.6 Curvature and Perfect Kekulé Structures -- References -- 4 Interacting Electrons in Graphene -- 4.1 Introduction -- 4.2 The Model -- 4.2.1 The Non-Interacting Tight-Binding Model -- 4.2.2 Mean-Field Theory -- 4.2.2.1 Screening and Local Field Effects -- 4.2.2.2 Derivation of the Form Factor -- 4.3 Numerical Implementation -- 4.4 Fermi Velocity Renormalization -- 4.5 Optical Response -- 4.6 Drude Weight -- 4.7 Precise QMC Study of Graphene Conductivity -- 4.8 Conclusion -- 4.9 Acknowledgments -- References -- 5 Computational Determination of the Properties of Graphene Nanoribbons -- 5.1 Computational Material Science -- 5.1.1 Application to Low-Dimensional Carbon Nanostructures -- 5.1.2 DFT -- 5.1.3 An Example Application of DFT -- 5.1.4 Periodic Boundary Conditions -- 5.1.5 Polyacenes, an Example of a Low-Dimensional Carbon Compound -- 5.2 Graphene -- 5.2.1 Structure and Fabrication -- 5.2.2 Calculation of Electronic Structure -- 5.2.3 Graphene Nanoribbons -- 5.2.4 Defected Graphene Ribbons -- 5.2.5 Magnetism in Graphene Nanoribbons -- 5.2.6 Doped Graphene Ribbons as Catalysts for Oxygen Reduction Reaction in Fuel Cells -- 5.2.7 Doped Graphene Ribbons as Catalysts for Hydrogen Production -- 5.3 Conclusion -- References -- 6 Synthetic Electric Fields Influence the Non-Stationary Processes in Graphene -- 6.1 Introduction -- 6.2 New Loss Mechanism in Graphene Nanoresonators Due to the Synthetic Electric Fields Caused by Inherent Out-of-Plane Membrane Corrugations. 6.2.1 Preliminaries -- 6.2.2 The Model -- 6.2.3 Joule-Type Loss Estimation and the Ways of Their Minimization -- 6.2.4 Summary -- 6.3 Surface Corrugations Influence on Monolayer Graphene Electromagnetic Response -- 6.3.1 Preliminaries -- 6.3.2 Generalization of MZ Equation -- 6.3.3 Summary -- 6.4 Radiative Decay Effects Influencing the Local Electromagnetic Response of the Monolayer Graphene with Surface Corrugations in Terahertz Range -- 6.4.1 Preliminaries -- 6.4.2 Generalized Self-Consistent Equation -- 6.4.3 Induced Current Pattern as Graphene Electromagnetic Response for Weak Fields -- 6.4.4 Summary and Discussion -- 6.5 Conclusion -- References -- 7 Interaction and Manipulation of Bi Adatoms on Monolayer Epitaxial Graphene -- 7.1 Introduction -- 7.1.1 Long-Range Interactions of Bismuth Adatoms at Room Temperature -- 7.1.2 Low-Dimensional Structures of Bismuth Adatoms and Temperature Effect -- 7.1.3 The Energetically Favorable Distribution of Bi Adatoms Using First-Principles Calculations -- 7.2 Long-Range Interactions of Bismuth Growth on MEG -- 7.2.1 As-Prepared MEG Surface -- 7.2.2 Low Coverage of Bismuth Growth on MEG -- 7.2.3 The Interaction Potential between the Bi Adatoms Using Pair Distance Distribution Analysis -- 7.2.4 The Relation between the Linear Bi Structures and Buffer Layer of SiC -- 7.3 Low-Dimensional Structures of Bismuth on MEG -- 7.3.1 Coverage-Dependent Structural Transition of Bi Adatoms Adsorbed on MEG -- 7.3.2 Structural Analysis of Bi Hexagonal Array -- 7.3.3 Temperature Effect of Bi Adatoms -- 7.4 The Energetically Favorable Distribution of Bi Adatoms Using First- Principles Calculations -- 7.4.1 Adsorption Energies of Various Bi Adsorption Sites on MEG -- 7.4.2 The Interaction Energies and DOS of Various Bi NCs with Annealing Treatment -- 7.5 Conclusion -- References. 8 Strain Engineering: Electromechanical Properties of Graphene -- 8.1 The Era of Strain Engineering of Graphene -- 8.2 Electronic Dispersion of Graphene and Dirac Fermions -- 8.3 Dirac Fermions in External Magnetic Field and Landau Levels -- 8.4 Dirac Hamiltonian of Graphene in Strain Field and Pseudomagnetic Field -- 8.5 The Coupling between Strain Field and Hopping Energy -- 8.6 The Coupling between Strain Field and Pseudomagnetic Field -- 8.7 Pseudo Landau Levels and Pseudospin Polarization -- 8.8 Strain-Induced Pseudomagnetic Field Greater Than 300 T -- 8.9 Graphene Drumheads and On-Demand Activation of Pseudomagnetic Field -- 8.10 Strain Engineering of Pseudomagnetic Field: Triaxial Stretching -- 8.11 Strain Engineering of Pseudomagnetic Field: Uniaxial Stretching -- 8.12 Strain Engineering towards Topological Insulators and Valleytronics -- 8.13 Summary -- References -- 9 Characteristic Mechanical Responses of Graphene Membranes -- 9.1 Characteristic Tensile Fracture of Polycrystalline Graphene -- 9.2 Compressive Mechanical Response of Polycrystalline Graphene -- 9.3 The GB Orientation Effects on the Tensile Fracture -- 9.4 Orientation-Dependent Tensile Fracture in Monocrystalline Graphene -- 9.5 Two-Dimensional Tensile Systems: Nanoindention -- References -- 10 Graphene and Its Derivatives as Platforms for MALDI-MS -- 10.1 Introduction -- 10.2 Matrix-Assisted Laser Desorption/Ionization Mass Spectrometry (MALDI-MS) -- 10.3 Application of Graphene and Its Derivatives for the Analysis of Large Biomolecules -- 10.4 Application of Graphene and Its Derivatives for the Analysis of Small Molecules -- 10.5 Graphene Application for Extraction and Separation Prior to Analysis Using MALDI-MS -- 10.6 Extraction and Separation of Proteins and Peptides Using Graphene-Based Nanomaterials. 10.7 Extraction and Separation of Small Molecules Using Graphene-Based Nanomaterials -- 10.8 Conclusions and Outlook -- Acknowledgments -- References -- 11 Characterization and Dynamic Manipulation of Graphene by In Situ Transmission Electron Microscopy at Atomic Scale -- 11.1 Introduction -- 11.2 The Development of TEM Technologies -- 11.2.1 Aberration Correction -- 11.2.2 Low-Voltage TEM -- 11.2.3 Exit-Wave Reconstruction Technology -- 11.3 Characterization of the Intrinsic Properties of Graphene -- 11.3.1 Characterization of the Layer Number of Graphene -- 11.3.2 Characterization of the Stacking State of Graphene -- 11.3.3 Characterization of the Graphene Edge -- 11.3.4 Characterization of the Point Defects of Graphene -- 11.3.5 Characterization of the Grain Boundary of Graphene -- 11.3.6 Characterization of the Heterostructures of Graphene -- 11.4 Dynamic Manipulation of Graphene -- 11.4.1 Fabrication of Graphene Nanostructures by Electron Beam Irradiation -- 11.4.2 In Situ Heating Manipulation -- 11.4.3 In Situ Electrical Testing -- 11.4.4 In Situ Mechanical Manipulation -- 11.4.5 Graphene Liquid Cell for In Situ TEM -- 11.5 Outlook and Challenges -- References -- 12 Peculiarities of Quasi-Particle Spectra in Graphene Nanostructures -- 12.1 Introduction -- 12.1.1 Electron Spectra of Graphene -- 12.1.2 The Phonon Spectrum of Graphene: General Provisions -- 12.1.2.1 Graphite Crystal Structure and Character of Force Constants between Its Atoms -- 12.1.2.2 Force Constants and Flexural Rigidity of the Layers -- 12.2 Electron and Phonon Spectra of Ultrathin Graphene Nanofilms -- 12.2.1 Electron Spectra of Non-Defect Bigraphene -- 12.2.2 Phonon Spectrum and Vibrational Characteristics of Graphene Nanofilms -- 12.2.2.1 Reconstruction and Relaxation at Nanofilms Formation -- 12.2.2.2 Spectral Densities and Mean-Square Amplitudes of Atomic Displacements. 12.2.2.3 Phonon Heat Capacity of Graphite and Graphene Nanofilms: Its "Non-Debye" Behavior.