Silicon Carbide and Related Materials 2013.

Intro -- Silicon Carbide and Related Materials 2013 -- Preface, Committees, Sponsors and Overview -- Table of Contents -- Chapter 1: SiC Bulk Growth -- 1.1 PVT and CVD -- Open Issues in SiC Bulk Growth -- Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography -- Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation -- Development of RAF Quality 150mm 4H-SiC Wafer -- Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth -- Effect of TaC-Coated Crucible on SiC Single Crystal Growth -- Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT -- Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT -- Spiral Step Dissociation on PVT Grown SiC Crystals -- Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis -- Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique -- 4H-SiC Bulk Growth Using High-Temperature Gas Source Method -- Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method -- Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method -- 1.2 Solution Growth -- Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC -- Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent -- Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach -- Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity -- Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents.

Chapter 2: SiC Epitaxial Growth -- 2.1 Homoepitaxial Growth -- Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques -- Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density -- Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications -- Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle -- Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor -- C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput -- Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor -- Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation -- 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106 -- Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate -- Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate -- Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT -- Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer -- Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates -- An Approach to Trace Defects Propagation during SiC Epitaxy -- Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers -- Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply -- Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates.

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor -- Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method -- Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates -- Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling -- Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers -- Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect -- Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate -- 4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate -- Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth -- First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface -- Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates -- HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices -- Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System -- Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements -- Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer -- 2.2 Heteroepitaxial Growth -- Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate -- The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC -- 3C-SiC Seeded Growth on Diamond Substrate by VLS Transport -- Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates -- Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere -- A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures.

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates -- Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition -- Chapter 3: Physical Properties and Characterization of SiC -- 3.1 Intrinsic Point Defetcs and Carrier Lifetime -- Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition -- Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures -- Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC -- Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence -- Identification of Structures of the Deep Levels in 4H-SiC -- Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS -- Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations -- Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy -- Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC -- Diffusion of Alkali Metals in SiC -- Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD -- On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates -- 3.2 Extended Defects -- Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy -- Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers -- Polarized Photoluminescence from Partial Dislocations in 4H-SiC -- Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers.

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography -- Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer -- Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation -- Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging -- Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method -- TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC -- Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers -- Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching -- Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal -- Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy -- Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing -- Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography -- Micro-Raman Characterization of 4H-SiC Stacking Faults -- Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers -- Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide -- Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate -- Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer -- Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography -- Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy.

3.3 Surface and Interface.

Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.

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