HeteroSiC and WASMPE 2011.

Intro -- HeteroSiC &amp -- WASMPE 2011 -- Preface, Sponsors and Committees -- Table of Contents -- Chapter 1: SiC Heteroepitaxial Growth -- Progress in 3C-SiC Growth and Novel Applications -- Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate -- CVD Growth of 3C-SiC on 4H-SiC Substrate -- The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers -- Structural Characterization of Heteroepitaxial 3C-SiC -- Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates -- Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer -- Chapter 2: Microsystems and Microstructures Based on SiC -- Study of 3C-SiC Mechanical Resonators, Filters and Mixers -- Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application -- Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling -- Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition -- Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma -- Material Limitations for the Development of High Performance SiC NWFETs -- Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate -- High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection -- Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers -- Chapter 3: Devices on SiC -- High Quality 3C-SiC Substrate for MOSFET Fabrication -- Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures -- Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs.

The Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors -- Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour -- Visible and Deep Ultraviolet Study of SiC/SiO2 Interface -- High Temperature Capability of High Voltage 4H-SiC JBS -- Parallel and Serial Association of SiC Light Triggered Thyristors -- Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs -- Chapter 4: Characterization: Devices and Material -- Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001) -- Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy -- Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si -- On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures -- Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications -- Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC -- Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures -- Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC -- Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC -- Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode -- Chapter 5: GaN: Devices and Material -- MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications -- Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications.

Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN -- Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon -- Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations -- GaN-on-Silicon Evaluation for High-Power MMIC Applications -- Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process -- Chapter 6: Graphene -- Almost Free Standing Graphene on SiC(000-1) and SiC(11-20) -- Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates -- Graphene Nano-Biosensors for Detection of Cancer Risk -- Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) -- Keywords Index -- Authors Index.

Selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.

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