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Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements.

By: Contributor(s): Material type: TextTextPublisher: San Diego : Elsevier Science & Technology, 2014Copyright date: ©2015Edition: 1st edDescription: 1 online resource (183 pages)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9780124199965
Subject(s): Genre/Form: Additional physical formats: Print version:: Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV ElementsDDC classification:
  • 621.381
LOC classification:
  • TK7874.84 -- .R333 2015eb
Online resources:
Contents:
Front Cover -- Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements -- Copyright Page -- Contents -- Acknowledgments -- Introduction: Scope and Purpose of Book -- 1 Metal Oxide Semiconductor Field Effect Transistors -- Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors -- Surface Space-Charge Regions in MOSFETs -- Leakage Components in MOSFETs -- Subthreshold Current -- Gate-Oxide Leakage -- S/D Junction Leakage -- MOS Capacitors -- Static Characterization of MOSFETs -- Transfer from 2D to 3D Nanoscaled Transistors -- Gate Integration in FinFETs -- Parasitic Sources in MOSFET Structure -- Lithography of Nanoscaled MOSFETs -- Sidewall Transfer Lithography -- Part Two: Strain Engineering in Group IV Materials -- Strain Design for MOSFETs -- Strain Effect on Carrier Mobility -- Basic Definitions -- Carrier Mobility in MOSFETs with Strained Si Channel -- Strain and Critical Thickness -- Global Critical Thickness of SiGe Layers -- Critical Thickness of SiGe Layers on Patterned Substrates -- Critical Thickness of SiGe Layers Grown on Nano Features -- Strain Measurements and Applications -- Strain Measurement -- Raman Spectroscopy -- TEM Analysis -- High-Resolution X-Ray Analysis -- Part Three: Chemical Vapor Deposition of Group IV Materials -- Selective and Nonselective Epitaxy -- Part Four: Improvement of the Channel Mobility -- Effect of Recess Shape in S/D -- Channel Materials and Mobility -- III-V Materials -- Graphene Material -- Silicene, Germanene, and Other Similar 2D Materials -- Germanium Material -- References -- 2 Basics of Integrated Photonics -- General -- Buried Channel Waveguide -- Strip-Loaded Waveguide -- Ridge Waveguide -- Rib Waveguide -- Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices -- Lasers -- Basics Of Photonic Detectors.
Detector Characteristics -- Responsivity -- Dark Current -- Noise Characteristics of Photodetectors -- Modulators: Principles and Mechanisms of Optical Modulation -- Photonics Switches: Spatial Routing of High-Speed Data Streams -- Switches -- Devices for Wavelength Division Multiplexed Systems -- Devices Based on Spectrally Dependent Interference Effects -- References -- 3 Silicon and Group IV Photonics -- Part One: Silicon Photonics Elements for Integrated Photonics -- General Properties -- Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices -- Silicon Electro-Optic Modulators -- Wavelength Selective Devices in Silicon -- The Ring Resonator -- Part Two: Bandgap Engineering in Group IV Materials for Photonic Application -- Part Three: Group IV Photodetectors -- Integration of Photodiodes with Waveguide or MOSFETs -- PhotoMOSFETs -- Group IV-Based Lasers -- Part Four: Graphene, New Photonic Material -- Photodetectors -- References -- 4 Moore's Law for Photonics and Electronics -- Downscaling of CMOS -- Evolution of Logic CMOS Since 1970 -- Prior to NTRS and ITRS Roadmaps -- After NRTS and ITRS -- Future of Logic CMOS and Beyond CMOS -- Transistor Physical Parameters -- Lithography -- Strain Engineering and Downscaling -- Gate Electrode -- Gate Dielectric -- Contact Resistance -- Substrate Design -- Heat Production -- Short Channel Effects -- Drain-Induced Barrier Lowering -- Punch Through -- Mobility Degradation -- Velocity Saturation -- Hot Electron Effect -- 3D Chips, New Vision for Downscaling -- Downscaling for Next 30 Years -- Moore's Law for Integrated Photonics Devices and Some Vision for the Future -- References -- 5 Complementing Silicon With Other Materials for Light Emission, Efficient Light Modulation and Subwavelength Light Confinement.
Part One: Light-Emitting Sources in Si as Photonic Material -- Rare Earth Metals in Semiconductors -- Porous Silicon -- Part Two: Competing and Complementing Technologies and Materials to an all Group IV-Based Photonics Approach -- III-V Materials, Plasmonics, and electrooptic polymers (EOPs) -- Introduction -- Monolithic Integration of III-V Compounds on Silicon -- Plasmonics -- Electro-Optic Polymers -- Authors' Final Words -- References.
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Front Cover -- Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements -- Copyright Page -- Contents -- Acknowledgments -- Introduction: Scope and Purpose of Book -- 1 Metal Oxide Semiconductor Field Effect Transistors -- Part One: Basics of Metal Oxide Semiconductor Field Effect Transistors -- Surface Space-Charge Regions in MOSFETs -- Leakage Components in MOSFETs -- Subthreshold Current -- Gate-Oxide Leakage -- S/D Junction Leakage -- MOS Capacitors -- Static Characterization of MOSFETs -- Transfer from 2D to 3D Nanoscaled Transistors -- Gate Integration in FinFETs -- Parasitic Sources in MOSFET Structure -- Lithography of Nanoscaled MOSFETs -- Sidewall Transfer Lithography -- Part Two: Strain Engineering in Group IV Materials -- Strain Design for MOSFETs -- Strain Effect on Carrier Mobility -- Basic Definitions -- Carrier Mobility in MOSFETs with Strained Si Channel -- Strain and Critical Thickness -- Global Critical Thickness of SiGe Layers -- Critical Thickness of SiGe Layers on Patterned Substrates -- Critical Thickness of SiGe Layers Grown on Nano Features -- Strain Measurements and Applications -- Strain Measurement -- Raman Spectroscopy -- TEM Analysis -- High-Resolution X-Ray Analysis -- Part Three: Chemical Vapor Deposition of Group IV Materials -- Selective and Nonselective Epitaxy -- Part Four: Improvement of the Channel Mobility -- Effect of Recess Shape in S/D -- Channel Materials and Mobility -- III-V Materials -- Graphene Material -- Silicene, Germanene, and Other Similar 2D Materials -- Germanium Material -- References -- 2 Basics of Integrated Photonics -- General -- Buried Channel Waveguide -- Strip-Loaded Waveguide -- Ridge Waveguide -- Rib Waveguide -- Basics of Lasers, Modulators, Detectors, and Wavelength Selective Devices -- Lasers -- Basics Of Photonic Detectors.

Detector Characteristics -- Responsivity -- Dark Current -- Noise Characteristics of Photodetectors -- Modulators: Principles and Mechanisms of Optical Modulation -- Photonics Switches: Spatial Routing of High-Speed Data Streams -- Switches -- Devices for Wavelength Division Multiplexed Systems -- Devices Based on Spectrally Dependent Interference Effects -- References -- 3 Silicon and Group IV Photonics -- Part One: Silicon Photonics Elements for Integrated Photonics -- General Properties -- Silicon Photonics Elements for Integrated Photonics: Modulators and Wavelength Selective Devices -- Silicon Electro-Optic Modulators -- Wavelength Selective Devices in Silicon -- The Ring Resonator -- Part Two: Bandgap Engineering in Group IV Materials for Photonic Application -- Part Three: Group IV Photodetectors -- Integration of Photodiodes with Waveguide or MOSFETs -- PhotoMOSFETs -- Group IV-Based Lasers -- Part Four: Graphene, New Photonic Material -- Photodetectors -- References -- 4 Moore's Law for Photonics and Electronics -- Downscaling of CMOS -- Evolution of Logic CMOS Since 1970 -- Prior to NTRS and ITRS Roadmaps -- After NRTS and ITRS -- Future of Logic CMOS and Beyond CMOS -- Transistor Physical Parameters -- Lithography -- Strain Engineering and Downscaling -- Gate Electrode -- Gate Dielectric -- Contact Resistance -- Substrate Design -- Heat Production -- Short Channel Effects -- Drain-Induced Barrier Lowering -- Punch Through -- Mobility Degradation -- Velocity Saturation -- Hot Electron Effect -- 3D Chips, New Vision for Downscaling -- Downscaling for Next 30 Years -- Moore's Law for Integrated Photonics Devices and Some Vision for the Future -- References -- 5 Complementing Silicon With Other Materials for Light Emission, Efficient Light Modulation and Subwavelength Light Confinement.

Part One: Light-Emitting Sources in Si as Photonic Material -- Rare Earth Metals in Semiconductors -- Porous Silicon -- Part Two: Competing and Complementing Technologies and Materials to an all Group IV-Based Photonics Approach -- III-V Materials, Plasmonics, and electrooptic polymers (EOPs) -- Introduction -- Monolithic Integration of III-V Compounds on Silicon -- Plasmonics -- Electro-Optic Polymers -- Authors' Final Words -- References.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.

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