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Space Microelectronics Vol 1 : Modern Spacecraft Classification, Failure, and Electrical Component Requirements.

By: Contributor(s): Material type: TextTextPublisher: Norwood : Artech House, 2017Copyright date: ©2017Edition: 1st edDescription: 1 online resource (415 pages)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9781630814687
Subject(s): Genre/Form: Additional physical formats: Print version:: Space Microelectronics Vol 1: Modern Spacecraft Classification, Failure, and Electrical Component RequirementsDDC classification:
  • 629.474
LOC classification:
  • TL3000 .B456 2017
Online resources:
Contents:
Space Microelectronics, Volume 1: Modern Spacecraft Classification, Failure, and Electrical Component Requirements -- Contents -- Preface -- Chapter 1 Modern Spacecraft -- 1.1 Space Industry Development -- 1.2 Classification of Modern Spacecraft -- 1.3 Spacecraft Designs and Structures -- 1.4 Spacecraft Onboard Systems -- 1.4.1 Classification of Spacecraft Onboard Systems -- 1.4.2 Peculiarities of Design of Onboard Information Control Complexes withthe Use of Programmable Logic Microchips -- 1.5 Earth Remote Sensing Spacecraft -- 1.5.1 ERS Spacecraft of the Russian Federation and the Republic of Belarus -- 1.5.2 ERS Spacecraft of Ukraine -- 1.5.3 ERS Spacecraft of the United States -- 1.5.4 ERS Spacecraft of Fran -- 1.5.5 ERS Spacecraft of Japan -- 1.5.6 ERS Spacecraft of India -- 1.5.7 ERS Spacecraft of China -- 1.5.8 ERS Spacecraft of the European Space Agency -- 1.5.9 Earth Remote Sensing Spacecraft of Other Countries -- 1.6 Earth Remote Sensing Radar Stations -- 1.7 The Effect of Space Radiation on SC -- 1.8 Micrometeoroid Effect on SC -- 1.9 The Problem of Space Debris in Earth Orbit -- 1.10 The Use of Microelectronic Technologies for the Development ofSpace Microrocket Engines -- 1.11 Military and Special-Purpose Spacecraft -- 1.11.1 Missile Early-Warning System -- 1.11.2 MEWS Ground-Based Echelon -- 1.11.3 Phased Arrays -- 1.11.4 MEWS Space Echelon -- 1.11.5 Military Reconnaissance Satellites -- References -- Selected Bibliography -- Chapter 2 Launch Vehicle and Spacecraft Failures and Accidents -- 2.1 Rocket and Space Technology Safety Issues -- 2.2 Analysis of Launch Vehicle Failure Causes -- 2.3 Analysis of Spacecraft Failures -- 2.4 Analysis of Failure Causes of Rocket and SpaceTechnology Products -- 2.5 Trend Analysis of Launch Vehicle Accident Risks in 2000-2009 -- 2.6 Analysis of SC Failure Trends in 2000-2009.
2.7 Analysis of LV and SC Accident Causes in 2000-2009 -- 2.8 Analysis of Computer System and Software Failures -- 2.9 Analysis of Onboard System Failures at the International Space Station in 2000s -- 2.10 Methods of Ensuring Onboard Equipment Reliability of Spacecraft of Long-Life Operation -- References -- Chapter 3 Microwave Electronics for Space and Military Applications -- 3.1 Basics of Microwave Electronics -- 3.2 Structure and Properties of Gallium Arsenide -- 3.3 Comparative Characteristics of GaAs and Si Properties -- 3.4 Microelectronic Devices Based on GaAs -- 3.4.1 Diodes Based on GaAs -- 3.4.2 Field Transistors -- 3.5 Heterojunction Bipolar Transistors -- 3.6 Optoelectronic Devices on GaAs -- 3.6.1 LEDs -- 3.6.2 Solar Batteries -- 3.7 New Devices on GaAs -- 3.8 Condition and Prospects of Development of Monolithic Microwave Integrated Circuits -- 3.8.1 Main Spheres of Usage of Monolithic Microwave Integrated Circuits -- 3.8.2 Main Materials for MMIC Production -- 3.8.3 MMIC Active Elements and Their Reliability -- 3.8.4 Advanced MMIC Design and Technology Solutions -- 3.9 Basic Areas and Peculiarities of GaAs MMIC Application -- 3.10 Main Technical Parameters of Overseas-Made Gallium Nitride Microcircuits of Active Phased Array AntennaTransceiver Modules -- 3.11 Brief Comparative Overview of the World Market Situation of MMICs Based on SiGe, GaN, AlGaN/GaN -- 3.12 Use of GaAs MMIC Technology in Foreign Aerospace andMilitary Equipment -- 3.12.1 MIMIC Program and Its Role in the Development of MMIC Technology -- 3.12.2 MMIC-Based Weapons Systems -- 3.13 Microwave Devices Based on Gallium Nitride -- 3.13.1 P ower GaN Transistors -- 3.13.2 Microwave Amplifiers Based on GaN Technology -- 3.13.3 Microwave Devices Based on RFHIC's Gallium Nitride Technology -- 3.13.4 Microwave Devices Based on the Technology of. Heterogeneous Integration.
References -- Selected Bibliography -- Chapter 4 Microelectronic Element Base of Rocket and Space Technology -- 4.1 Classification of Modern Microprocessors -- 4.2 Processors of Electronic Control Systems of Foreign Spacecraft -- 4.2.1 Onboard Processors of Foreign Spacecraft -- 4.2.2 Aitech Defense Systems -- 4.2.3 Microsemi -- 4.2.4 BAE Systems -- 4.2.5 Honeywell -- 4.2.6 Microprocessors with SPA RC Architecture -- 4.2.7 Microprocessors of Atmel -- 4.2.8 Aeroflex -- 4.3 Domestic Microprocessors and Microcontrollers -- 4.3.1 OJSC Angstrem (Zelenograd) -- 4.3.2 OJSC NIIME (Scientific Research Institute of Molecular Electronics) and Mikron (Zelenograd) -- 4.3.3 Scientific Research Institute of System Analysis of Russian Academy of Sciences (NIISI RAN) -- 4.3.4 Federal State Unitary Enterprise Federal Research and Production Center Measuring Systems Research Institute Named after Y. Y. Sedakov (Nizhny Novgorod) -- 4.3.5 Svetlana-Semiconductors CJSC (Saint Petersburg) -- 4.3.6 OJSC Scientific-Research Institute of Electronic Technology (OJSC NIIET) (Voronezh) -- 4.3.7 CJCS ICC Milandr (Zelenograd) -- 4.3.8 Research and Development Center OJSC ELVEES (Zelenograd) -- 4.3.9 CJSC Research Center Module (Moscow) -- 4.3.10 CJSC MCST (Moscow) -- 4.3.11 OJSC NIIMA Progress (Moscow) -- 4.3.12 Design Center KM211, Ltd. (Zelenograd) -- 4.3.13 Scientific Production Enterprise Digital Solutions (Moscow) -- 4.3.14 OJSC Multiclet (Yekaterinburg) -- 4.3.15 Scientific-Research Institute of Multiprocessing Computing Systems Named after Kalyaev of South Federal University, Taganrog (NII MVS YuFU,Taganrog) -- 4.3.16 Scientific-Industrial Complex Technology Center and JSC Plant PROTON-MIET -- 4.3.17 P rivate Enterprise NT Lab Systems, Minsk -- 4.3.18 Scientific and Technical Center DELS (Minsk) -- 4.4 MP and MC Development and Debugging Tools.
4.5 Development Trends of Modern Microcontrollers -- 4.5.1 Customer Transition to 32-Bit Microcontrollers -- 4.5.2 Licensed Architectures MIPS32 and Cortex-M -- 4.5.3 Features of Designing and Organizing Production of Microcircuits of Space Application -- 4.6 Peculiarities of Using a Fabless Model for Designing Microelectronic Products for Space Application -- 4.6.1 Preconditions of the Fabless Business Model Emergence and Development -- 4.6.2 Structure and Features of Fabless Business -- 4.6.3 Peculiarities of the Choice of Customer for Fabless Project -- 4.6.4 Technical Prerequisites and Conditions of Implementation of StandardFabless Projects, Software, and Design Libraries -- 4.6.5 Choice of Manufacturing Process -- 4.6.6 Need for Own Analytical Base -- 4.6.7 Manufacturing of Prototypes -- 4.6.8 Financial Paradigm of Fabless Projects -- 4.6.9 General Recommendations on Work Organization in Fabless Mode -- 4.7 Special Considerations Relating to the Selection of Foreign-MadeECB for the Design of Domestic SC -- 4.7.1 Basic Premises for the Necessity of Using Foreign-Made ECB -- 4.7.2 Considerations for the Foreign-Made ECB Selection Phase -- 4.7.3 Special Aspects of Certification Tests of Foreign-Made ECB -- 4.7.4 Considerations on How to Perform the Analysis of Separate Lists of Foreign-Made ECB -- 4.8 Features of Homemade Element Base for Spacecraft Power Supply Systems -- 4.9 Resistance of Onboard Electronic Equipment to Ionizing Space Radiation -- 4.10 P ower Semiconductor Devices for SC Electronic Systems -- 4.10.1 Basic Principles of Power Device Operation -- 4.10.2 Key Processes for Power Devices -- 4.10.3 Power MOSFET -- 4.10.4 Smart MOS Transistors (SmartFET) -- 4.10.5 Smart Power ICs -- 4.10.6 Smart ICs of Power Systems -- References -- Chapter 5 PDK Structure and Specific Uses in the Development of Products with Submicron Design Rules.
5.1 PDK Development Process Flow, Standard PDK Structure -- 5.2 T erms and Definitions Used to Describe PDK Components -- 5.3 PDK Standardization -- 5.4 Mixed Analog/Digital Circuits Design Flow -- 5.5 Generalized Information Model of a Mixed Analog-Digital IC Design -- 5.6 Determining the Basic PDK Components and Standard Elements List -- 5.7 Features of the Digital Libraries Development for Designing Custom ICs with Submicron Design Rules -- 5.8 Structural and Circuit-Related Features of Submicron ICs Library Basic Cells Design -- 5.8.1 Voltage Level Shifters -- 5.8.2 Power Gating -- 5.8.3 Isolator Cells (Isolators) in Submicron Microcircuits -- 5.8.4 Always-On Buffers -- 5.9 Standard PDK Data Files -- 5.10 P DK Standard Current Source Models (CCS) -- 5.11 Methods and Examples of Adaptation of Standard IC Design Tools for Designing Microcircuits with 90-, 65-, 45-nm Design Rules -- 5.11.1 Teaching (Educational) Design Kit by Synopsys: Possibilities, Applications, Prospects -- 5.11.2 Brief Overview of EDK by Synopsys -- 5.11.3 Synopsys Digital Standard Cell Library -- 5.11.4 I/O Standard Cell Library -- 5.11.5 Standard Set of PDK Memory Modules -- 5.11.6 Phase-Locked Loop -- 5.11.7 T he Geography of Application and Prospects of EDK -- 5.12 Contents of Educational Design Kits Provided by IMEC -- References -- List of Acronyms and Abbreviations -- About the Authors -- Index.
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Space Microelectronics, Volume 1: Modern Spacecraft Classification, Failure, and Electrical Component Requirements -- Contents -- Preface -- Chapter 1 Modern Spacecraft -- 1.1 Space Industry Development -- 1.2 Classification of Modern Spacecraft -- 1.3 Spacecraft Designs and Structures -- 1.4 Spacecraft Onboard Systems -- 1.4.1 Classification of Spacecraft Onboard Systems -- 1.4.2 Peculiarities of Design of Onboard Information Control Complexes withthe Use of Programmable Logic Microchips -- 1.5 Earth Remote Sensing Spacecraft -- 1.5.1 ERS Spacecraft of the Russian Federation and the Republic of Belarus -- 1.5.2 ERS Spacecraft of Ukraine -- 1.5.3 ERS Spacecraft of the United States -- 1.5.4 ERS Spacecraft of Fran -- 1.5.5 ERS Spacecraft of Japan -- 1.5.6 ERS Spacecraft of India -- 1.5.7 ERS Spacecraft of China -- 1.5.8 ERS Spacecraft of the European Space Agency -- 1.5.9 Earth Remote Sensing Spacecraft of Other Countries -- 1.6 Earth Remote Sensing Radar Stations -- 1.7 The Effect of Space Radiation on SC -- 1.8 Micrometeoroid Effect on SC -- 1.9 The Problem of Space Debris in Earth Orbit -- 1.10 The Use of Microelectronic Technologies for the Development ofSpace Microrocket Engines -- 1.11 Military and Special-Purpose Spacecraft -- 1.11.1 Missile Early-Warning System -- 1.11.2 MEWS Ground-Based Echelon -- 1.11.3 Phased Arrays -- 1.11.4 MEWS Space Echelon -- 1.11.5 Military Reconnaissance Satellites -- References -- Selected Bibliography -- Chapter 2 Launch Vehicle and Spacecraft Failures and Accidents -- 2.1 Rocket and Space Technology Safety Issues -- 2.2 Analysis of Launch Vehicle Failure Causes -- 2.3 Analysis of Spacecraft Failures -- 2.4 Analysis of Failure Causes of Rocket and SpaceTechnology Products -- 2.5 Trend Analysis of Launch Vehicle Accident Risks in 2000-2009 -- 2.6 Analysis of SC Failure Trends in 2000-2009.

2.7 Analysis of LV and SC Accident Causes in 2000-2009 -- 2.8 Analysis of Computer System and Software Failures -- 2.9 Analysis of Onboard System Failures at the International Space Station in 2000s -- 2.10 Methods of Ensuring Onboard Equipment Reliability of Spacecraft of Long-Life Operation -- References -- Chapter 3 Microwave Electronics for Space and Military Applications -- 3.1 Basics of Microwave Electronics -- 3.2 Structure and Properties of Gallium Arsenide -- 3.3 Comparative Characteristics of GaAs and Si Properties -- 3.4 Microelectronic Devices Based on GaAs -- 3.4.1 Diodes Based on GaAs -- 3.4.2 Field Transistors -- 3.5 Heterojunction Bipolar Transistors -- 3.6 Optoelectronic Devices on GaAs -- 3.6.1 LEDs -- 3.6.2 Solar Batteries -- 3.7 New Devices on GaAs -- 3.8 Condition and Prospects of Development of Monolithic Microwave Integrated Circuits -- 3.8.1 Main Spheres of Usage of Monolithic Microwave Integrated Circuits -- 3.8.2 Main Materials for MMIC Production -- 3.8.3 MMIC Active Elements and Their Reliability -- 3.8.4 Advanced MMIC Design and Technology Solutions -- 3.9 Basic Areas and Peculiarities of GaAs MMIC Application -- 3.10 Main Technical Parameters of Overseas-Made Gallium Nitride Microcircuits of Active Phased Array AntennaTransceiver Modules -- 3.11 Brief Comparative Overview of the World Market Situation of MMICs Based on SiGe, GaN, AlGaN/GaN -- 3.12 Use of GaAs MMIC Technology in Foreign Aerospace andMilitary Equipment -- 3.12.1 MIMIC Program and Its Role in the Development of MMIC Technology -- 3.12.2 MMIC-Based Weapons Systems -- 3.13 Microwave Devices Based on Gallium Nitride -- 3.13.1 P ower GaN Transistors -- 3.13.2 Microwave Amplifiers Based on GaN Technology -- 3.13.3 Microwave Devices Based on RFHIC's Gallium Nitride Technology -- 3.13.4 Microwave Devices Based on the Technology of. Heterogeneous Integration.

References -- Selected Bibliography -- Chapter 4 Microelectronic Element Base of Rocket and Space Technology -- 4.1 Classification of Modern Microprocessors -- 4.2 Processors of Electronic Control Systems of Foreign Spacecraft -- 4.2.1 Onboard Processors of Foreign Spacecraft -- 4.2.2 Aitech Defense Systems -- 4.2.3 Microsemi -- 4.2.4 BAE Systems -- 4.2.5 Honeywell -- 4.2.6 Microprocessors with SPA RC Architecture -- 4.2.7 Microprocessors of Atmel -- 4.2.8 Aeroflex -- 4.3 Domestic Microprocessors and Microcontrollers -- 4.3.1 OJSC Angstrem (Zelenograd) -- 4.3.2 OJSC NIIME (Scientific Research Institute of Molecular Electronics) and Mikron (Zelenograd) -- 4.3.3 Scientific Research Institute of System Analysis of Russian Academy of Sciences (NIISI RAN) -- 4.3.4 Federal State Unitary Enterprise Federal Research and Production Center Measuring Systems Research Institute Named after Y. Y. Sedakov (Nizhny Novgorod) -- 4.3.5 Svetlana-Semiconductors CJSC (Saint Petersburg) -- 4.3.6 OJSC Scientific-Research Institute of Electronic Technology (OJSC NIIET) (Voronezh) -- 4.3.7 CJCS ICC Milandr (Zelenograd) -- 4.3.8 Research and Development Center OJSC ELVEES (Zelenograd) -- 4.3.9 CJSC Research Center Module (Moscow) -- 4.3.10 CJSC MCST (Moscow) -- 4.3.11 OJSC NIIMA Progress (Moscow) -- 4.3.12 Design Center KM211, Ltd. (Zelenograd) -- 4.3.13 Scientific Production Enterprise Digital Solutions (Moscow) -- 4.3.14 OJSC Multiclet (Yekaterinburg) -- 4.3.15 Scientific-Research Institute of Multiprocessing Computing Systems Named after Kalyaev of South Federal University, Taganrog (NII MVS YuFU,Taganrog) -- 4.3.16 Scientific-Industrial Complex Technology Center and JSC Plant PROTON-MIET -- 4.3.17 P rivate Enterprise NT Lab Systems, Minsk -- 4.3.18 Scientific and Technical Center DELS (Minsk) -- 4.4 MP and MC Development and Debugging Tools.

4.5 Development Trends of Modern Microcontrollers -- 4.5.1 Customer Transition to 32-Bit Microcontrollers -- 4.5.2 Licensed Architectures MIPS32 and Cortex-M -- 4.5.3 Features of Designing and Organizing Production of Microcircuits of Space Application -- 4.6 Peculiarities of Using a Fabless Model for Designing Microelectronic Products for Space Application -- 4.6.1 Preconditions of the Fabless Business Model Emergence and Development -- 4.6.2 Structure and Features of Fabless Business -- 4.6.3 Peculiarities of the Choice of Customer for Fabless Project -- 4.6.4 Technical Prerequisites and Conditions of Implementation of StandardFabless Projects, Software, and Design Libraries -- 4.6.5 Choice of Manufacturing Process -- 4.6.6 Need for Own Analytical Base -- 4.6.7 Manufacturing of Prototypes -- 4.6.8 Financial Paradigm of Fabless Projects -- 4.6.9 General Recommendations on Work Organization in Fabless Mode -- 4.7 Special Considerations Relating to the Selection of Foreign-MadeECB for the Design of Domestic SC -- 4.7.1 Basic Premises for the Necessity of Using Foreign-Made ECB -- 4.7.2 Considerations for the Foreign-Made ECB Selection Phase -- 4.7.3 Special Aspects of Certification Tests of Foreign-Made ECB -- 4.7.4 Considerations on How to Perform the Analysis of Separate Lists of Foreign-Made ECB -- 4.8 Features of Homemade Element Base for Spacecraft Power Supply Systems -- 4.9 Resistance of Onboard Electronic Equipment to Ionizing Space Radiation -- 4.10 P ower Semiconductor Devices for SC Electronic Systems -- 4.10.1 Basic Principles of Power Device Operation -- 4.10.2 Key Processes for Power Devices -- 4.10.3 Power MOSFET -- 4.10.4 Smart MOS Transistors (SmartFET) -- 4.10.5 Smart Power ICs -- 4.10.6 Smart ICs of Power Systems -- References -- Chapter 5 PDK Structure and Specific Uses in the Development of Products with Submicron Design Rules.

5.1 PDK Development Process Flow, Standard PDK Structure -- 5.2 T erms and Definitions Used to Describe PDK Components -- 5.3 PDK Standardization -- 5.4 Mixed Analog/Digital Circuits Design Flow -- 5.5 Generalized Information Model of a Mixed Analog-Digital IC Design -- 5.6 Determining the Basic PDK Components and Standard Elements List -- 5.7 Features of the Digital Libraries Development for Designing Custom ICs with Submicron Design Rules -- 5.8 Structural and Circuit-Related Features of Submicron ICs Library Basic Cells Design -- 5.8.1 Voltage Level Shifters -- 5.8.2 Power Gating -- 5.8.3 Isolator Cells (Isolators) in Submicron Microcircuits -- 5.8.4 Always-On Buffers -- 5.9 Standard PDK Data Files -- 5.10 P DK Standard Current Source Models (CCS) -- 5.11 Methods and Examples of Adaptation of Standard IC Design Tools for Designing Microcircuits with 90-, 65-, 45-nm Design Rules -- 5.11.1 Teaching (Educational) Design Kit by Synopsys: Possibilities, Applications, Prospects -- 5.11.2 Brief Overview of EDK by Synopsys -- 5.11.3 Synopsys Digital Standard Cell Library -- 5.11.4 I/O Standard Cell Library -- 5.11.5 Standard Set of PDK Memory Modules -- 5.11.6 Phase-Locked Loop -- 5.11.7 T he Geography of Application and Prospects of EDK -- 5.12 Contents of Educational Design Kits Provided by IMEC -- References -- List of Acronyms and Abbreviations -- About the Authors -- Index.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.

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