Electronic Conduction : Classical and Quantum Theory to Nanoelectronic Devices.

Cover -- Half Title -- Series Page -- Title Page -- Copyright Page -- Dedication -- Contents -- Preface -- About the Author -- PART I: Prerequisites: Quantum Mechanics and the Electronic States in Solids -- CHAPTER 1: Quantum Mechanics -- 1.1. THE TWO-SLIT EXPERIMENT -- 1.2. THE SCHROEDINGER EQUATION, WAVEFUNCTIONS AND OPERATORS -- 1.3. PARTICLE IN A RECTANGULAR BOX -- 1.4. MORE QUANTUM MECHANICS, HEISENBERG'S UNCERTAINTY PRINCIPLE -- 1.5. STATISTICS OF ELECTRON OCCUPANCY, THE PAULI PRINCIPLE AND THE FERMI - DIRAC DISTRIBUTION -- 1.6. THE HYDROGEN ATOM AND THE ATOMS OF THE PERIODIC TABLE -- 1.7. BARRIER PENETRATION, TUNNELLING -- 1.8. PROBABILITY CURRENT DENSITY AND THE WKB APPROXIMATION -- CHAPTER 2: Electron States in Solids -- 2.1. QUALITATIVE DESCRIPTION OF SOLIDS AND THEIR ENERGY BANDS -- 2.2. THE k-SPACE, BLOCH'S THEOREM AND BRILLOUIN ZONES -- 2.3. THE LCAO METHOD OF CALCULATING ENERGY LEVELS -- 2.4. QUICK REVISION OF THE CONCEPT OF A HOLE AND DOPING -- 2.5. VELOCITY OF ELECTRONS IN SOLIDS -- 2.6. THE CONCEPT OF EFFECTIVE MASS -- 2.7. CONCENTRATION OF CARRIERS IN SEMICONDUCTORS AND METALS -- 2.8. THE EFFECTIVE MASS EQUATION -- PART II: Theory of Conduction -- CHAPTER 3: Simple Classical Theory of Conduction -- 3.1. EXTERNAL VOLTAGES AND FERMI LEVELS -- 3.2. COLLISIONS AND DRIFT MOBILITY -- 3.3. MECHANISMS OF SCATTERING -- 3.4. RECOMBINATION OF CARRIERS -- 3.5. DIFFUSION CURRENT -- 3.6. CONTINUITY EQUATIONS -- 3.7. THE IDEAL PN JUNCTION AT EQUILIBRIUM -- 3.8. THE IDEAL PN JUNCTION UNDER BIAS -- 3.9. THE NON-IDEAL, REAL PN JUNCTION -- 3.10. THE METAL-SEMICONDUCTOR OR SCHOTTKY JUNCTION -- CHAPTER 4: Advanced Classical Theory of Conduction -- 4.1. THE NEED FOR A BETTER CLASSICAL THEORY OF CONDUCTION -- 4.2. THE BOLTZMANN EQUATION -- 4.3. SOLUTION OF THE BOLTZMANN EQUATION BY THE RELAXATION TIME APPROXIMATION.

4.4. APPLICATION OF AN ELECTRIC FIELD-CONDUCTIVITY OF SOLIDS -- 4.5. DIFFUSION CURRENTS -- 4.6. GENERAL EXPRESSION FOR THE CURRENT DENSITY -- 4.7. APPLICATION OF A THERMAL GRADIENT, THE SEEBECK EFFECT -- 4.8. SATURATION OF DRIFT VELOCITY -- 4.9. GUNN EFFECT AND VELOCITY OVERSHOOT -- 4.10. THE (CLASSICAL) HALL EFFECT -- CHAPTER 5: The Quantum Theory of Conduction -- 5.1. CRITIQUE OF THE BOLTZMANN EQUATION, REGIMES OF CONDUCTION -- 5.2. ELECTRONIC STRUCTURE OF LOW-DIMENSIONAL SYSTEMS -- 5.3. THE LANDAUER FORMALISM -- 5.4. THE EFFECTIVE MASS EQUATION FOR HETEROSTRUCTURES -- 5.5. TRANSMISSION MATRICES, AIRY FUNCTIONS -- 5.6. THE RESONANT TUNNELLING DIODE OR RTD -- PART III: Devices -- CHAPTER 6: Field Emission and Vacuum Devices -- 6.1. INTRODUCTION -- 6.2. THE 1-DIMENSIONAL WKB EQUATION -- 6.3. FIELD EMISSION FROM PLANAR SURFACES -- 6.4. THE 3-DIMENSIONAL WKB PROBLEM -- 6.5. FIELD EMISSION FROM CURVED SURFACES (ELECTRON GUNS) -- 6.6. THE VACUUM TRANSISTOR -- CHAPTER 7: The MOSFET -- 7.1. INTRODUCTION -- 7.2. PRINCIPLE OF OPERATION OF THE MOSFET -- 7.3. SIMPLE CLASSICAL THEORY -- 7.4. ADVANCED CLASSICAL THEORY -- 7.5. QUANTUM THEORY OF THE MOSFET -- 7.6. TIME-DEPENDENT PERFORMANCE AND MOORE'S LAW -- 7.7. THE FINFET, A 3-DIMENSIONAL MOSFET -- CHAPTER 8: Post-Si FETs -- 8.1. INTRODUCTION -- 8.2. SIMPLE THEORY OF THE HEMT -- 8.3. ADVANCED THEORY OF THE HEMT -- 8.4. THE III-V MOSFET -- 8.5. THE CARBON NANOTUBE FET, CNFET, OR CNTFET -- APPENDIX A: Further Development of Quantum Mechanics, Angular Momentum, and Spin of the Electron -- APPENDIX B: Lattice Vibrations -- APPENDIX C: Impurity States in Semiconductors -- APPENDIX D: Direct and Indirect Band-Gap and Optical Transitions -- APPENDIX E: Proof of the Field Emission Formula -- BIBLIOGRAPHY -- INDEX.

This book provides a concise, complete introduction to the fundamental principles of electronic conduction in microelectronic and nanoelectronic devices, with an emphasis on integrating the quantum aspects of conduction.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.