Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films.

Intro -- 1 Introduction -- 2 Fundamentals -- 2.1 Non-volatile semiconductor memories -- 2.2 Emerging memory concepts -- 2.3 Ferroelectric memories -- 3 Characterisation methods -- 3.1 Memory characterisation tests -- 3.2 Ferroelectric memory specific characterisation tests -- 3.3 Trapping characterisation methods -- 3.4 Microstructural analyses -- 4 Sample description -- 4.1 Metal-insulator-metal capacitors -- 4.2 Ferroelectric field effect transistors -- 5 Stabilisation of the ferroelectric properties in Si:HfO2 thin films -- 5.1 Impact of the silicon doping -- 5.2 Impact of the post-metallisation anneal -- 5.3 Impact of the film thickness -- 5.4 Summary -- 6 Electrical properties of the ferroelectric Si:HfO2 thin films -- 6.1 Field cycling effect -- 6.2 Switching kinetics -- 6.3 Fatigue behaviour -- 6.4 Summary -- 7 Ferroelectric field effect transistors based on Si:HfO2 films -- 7.1 Effect of the silicon doping -- 7.2 Program and erase operation -- 7.3 Retention behaviour -- 7.4 Endurance properties -- 7.5 Impact of scaling on the device performance -- 7.6 Summary -- 8 Trapping effects in Si:HfO2-based FeFETs -- 8.1 Trapping kinetics of the bulk Si:HfO2 traps -- 8.2 Detrapping kinetics of the bulk Si:HfO2 traps -- 8.3 Impact of trapping on the FeFET performance -- 8.4 Modified approach for erase operation -- 8.5 Summary -- 9 Summary and Outlook.

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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.