Springer Handbook of Electronic and Photonic Materials.

Intro -- Foreword -- Preface -- About the Editors -- List of Authors -- Contents -- List of Abbreviations -- 1 Perspectives on Electronic and Photonic Materials -- 1.1 Tremendous Integration -- 1.2 The Silicon Age -- 1.3 The Compound Semiconductors -- References -- Part A Fundamental Properties -- 2 Electrical Conduction in Metals and Semiconductors -- 2.1 Fundamentals: Drift Velocity, Mobility and Conductivity -- 2.2 Matthiessen's Rule -- 2.3 Resistivity of Metals -- 2.4 Solid Solutions and Nordheim's Rule -- 2.5 Carrier Scattering in Semiconductors -- 2.6 The Boltzmann Transport Equation -- 2.7 Resistivity of Thin Polycrystalline Films -- 2.8 Inhomogeneous Media: Effective Media Approximation -- 2.9 The Hall Effect -- 2.10 High Electric Field Transport -- 2.11 Impact Ionization -- 2.12 Two-Dimensional Electron Gas -- 2.13 One-Dimensional Conductance -- 2.14 The Quantum Hall Effect -- References -- 3 Optical Properties of Electronic Materials: Fundamentals and Characterization -- 3.1 Optical Constants -- 3.2 Refractive Index -- 3.3 Optical Absorption -- 3.4 Optical Characterization -- 3.5 Optical Materials -- References -- 4 Magnetic Properties: From Traditional to Spintronic -- 4.1 Traditional Magnetism -- 4.2 Nonconventional Magnetism and Progress Toward Spintronics and Quantum Devices -- 4.3 Spintronics and Quantum Information Devices -- References -- 5 Defects in Monocrystalline Silicon -- 5.1 Technological Impact of Intrinsic Point Defects Aggregates -- 5.2 Thermophysical Properties of Intrinsic Point Defects -- 5.3 Aggregates of Intrinsic Point Defects -- 5.4 Formation of OSF Ring -- References -- 6 Diffusion in Semiconductors -- 6.1 Basic Concepts -- 6.2 Diffusion Mechanisms -- 6.3 Diffusion Regimes -- 6.4 Internal Electric Fields -- 6.5 Measurement of Diffusion Coefficients -- 6.6 Hydrogen in Semiconductors.

6.7 Diffusion in Group IV Semiconductors -- 6.8 Diffusion in III-V Compounds -- 6.9 Diffusion in II-VI Compounds -- 6.10 Nano Volume Diffusion -- 6.11 Diffusion in Molten Semiconductors -- 6.12 The Meyer-Neldel Rule -- 6.13 Conclusions -- 6.14 General Reading and References -- References -- 7 Photoconductivity in Materials Research -- 7.1 Steady-State Photoconductivity (SSPC) -- 7.2 Constant Photocurrent Method (CPM) and Related Techniques -- 7.3 Steady-State Photocarrier Grating Method (SSPG) -- 7.4 Modulated Photocurrent Spectroscopy (MPC) -- 7.5 Switch-on and Switch-off Transients -- 7.6 Transient Photocurrent Spectroscopy (TPC) -- 7.7 Time-of-Flight (TOF) and Related Techniques -- 7.8 Other Photoconductivity-Related Techniques -- References -- 8 Electronic Properties of Semiconductor Interfaces -- 8.1 Experimental Database -- 8.2 IFIGS-and-Electronegativity Theory -- 8.3 Comparison of Experiment and Theory -- 8.4 Modifications of Schottky Contacts -- 8.5 Graphene Schottky Contacts -- 8.6 Final Remarks -- References -- 9 Charge Transport in Disordered Materials -- 9.1 General Remarks on Charge Transport in Disordered Materials -- 9.2 Charge Transport in Disordered Materials via Extended States -- 9.3 Hopping Charge Transport in Disordered Materials via Localized States -- 9.4 Concluding Remarks -- References -- 10 Dielectric Response -- 10.1 Definition of Dielectric Response -- 10.2 Frequency-Dependent Linear Responses -- 10.3 Information Contained in the Relaxation Response -- 10.4 Charge Transport -- 10.5 Data Presentation -- 10.6 A Few Final Comments -- References -- 11 Ionic Conduction and Applications -- 11.1 Conduction in Ionic Solids -- 11.2 Fast Ion Conduction -- 11.3 Mixed Ionic-Electronic Conduction -- 11.4 Applications -- 11.5 Future Trends -- References -- Part B Growth and Characterization.

12 Bulk Crystal Growth: Methods and Materials -- 12.1 Background -- 12.2 History -- 12.3 Techniques -- 12.4 Materials Grown -- 12.5 Conclusions -- References -- 13 Single-Crystal Silicon: Growth and Properties -- 13.1 Overview -- 13.2 Starting Materials -- 13.3 Single-Crystal Growth -- 13.4 New Crystal Growth Methods -- References -- 14 Epitaxial Crystal Growth: Methods and Materials -- 14.1 Liquid-Phase Epitaxy (LPE) -- 14.2 Metal Organic Chemical Vapor Deposition -- 14.3 Molecular Beam Epitaxy (MBE) -- References -- 15 Narrow Bandgap II-VI Semiconductors: Growth -- 15.1 Bulk Growth Techniques -- 15.2 Liquid Phase Epitaxy (LPE) -- 15.3 Metal-Organic Vapor Phase Epitaxy (MOVPE) -- 15.4 Molecular Beam Epitaxy (MBE) -- 15.5 Alternatives to MCT -- References -- 16 Wide-Bandgap II-VI Semiconductors: Growth and Properties -- 16.1 Crystal Properties -- 16.2 Epitaxial Growth -- 16.3 Bulk Crystal Growth -- 16.4 Conclusions -- References -- 17 Structural Characterization -- 17.1 Radiation-Material Interactions -- 17.2 Particle-Material Interactions -- 17.3 X-ray Diffraction -- 17.4 Optics, Imaging and Electron Diffraction -- 17.5 Characterizing Functional Activity -- 17.6 Sample Preparation -- 17.7 Case Studies - Complementary Characterization of Electronic and Optoelectronic Materials -- 17.8 Concluding Remarks -- References -- 18 Surface Chemical Analysis -- 18.1 Electron Spectroscopy -- 18.2 Glow-Discharge Spectroscopies (GDOES and GDMS) -- 18.3 Secondary Ion Mass Spectrometry (SIMS) -- 18.4 Conclusion -- 19 Thermal Properties and Thermal Analysis: Fundamentals, Experimental Techniques and Applications -- 19.1 Heat Capacity -- 19.2 Thermal Conductivity -- 19.3 Thermal Expansion -- 19.4 Enthalpic Thermal Properties -- 19.5 Temperature-Modulated DSC (TMDSC) -- References -- 20 Electrical Characterization of Semiconductor Materials and Devices.

20.1 Resistivity -- 20.2 Hall Effect -- 20.3 Capacitance-Voltage Measurements -- 20.4 Current-Voltage Measurements -- 20.5 Charge Pumping -- 20.6 Low-Frequency Noise -- 20.7 Deep-Level Transient Spectroscopy -- References -- Part C Materials for Electronics -- 21 Single-Crystal Silicon: Electrical and Optical Properties -- 21.1 Silicon Basics -- 21.2 Electrical Properties -- 21.3 Optical Properties -- References -- 22 Silicon-Germanium: Properties, Growth and Applications -- 22.1 Physical Properties of Silicon-Germanium -- 22.2 Optical Properties of SiGe -- 22.3 Growth of Silicon-Germanium -- 22.4 Polycrystalline Silicon-Germanium -- References -- 23 Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi -- 23.1 Tl-III-V Alloy Semiconductors -- 23.2 III-V-Bi Alloy Semiconductors -- 23.3 Summary -- References -- 24 Amorphous Semiconductors: Structure, Optical, and Electrical Properties -- 24.1 Electronic States -- 24.2 Structural Properties -- 24.3 Optical Properties -- 24.4 Electrical Properties -- 24.5 Light-Induced Phenomena -- 24.6 Nanosized Amorphous Structure -- References -- 25 Amorphous and Microcrystalline Silicon -- 25.1 Reactions in SiH_4 and SiH_4/H_2 Plasmas -- 25.2 Film Growth on a Surface -- 25.3 Defect Density Determination for a-Si:H and c-Si:H -- 25.4 Device Applications -- 25.5 Recent Progress in Material Issues Related to Thin-Film Silicon Solar Cells -- 25.6 Summary -- References -- 26 Ferroelectric Materials -- 26.1 Definitions and Background -- 26.2 Ferroelectric Materials -- 26.3 Ferroelectric Materials Fabrication Technology -- 26.4 Ferroelectric Applications -- References -- 27 Dielectric Materials for Microelectronics -- 27.1 Overview -- 27.2 Gate Dielectrics -- 27.3 Isolation Dielectrics -- 27.4 Capacitor Dielectrics -- 27.5 Interconnect Dielectrics -- 27.6 Summary -- References -- 28 Thin Films.

28.1 Deposition Methods -- 28.2 Structure -- 28.3 Properties -- 28.4 Concluding Remarks -- References -- 29 Thick Films -- 29.1 Thick Film Processing -- 29.2 Substrates -- 29.3 Thick Film Materials -- 29.4 Components and Assembly -- 29.5 Sensors -- References -- Part D Materials for Optoelectronics and Photonics -- 30 III-V Ternary and Quaternary Compounds -- 30.1 Introduction to III-V Ternary and Quaternary Compounds -- 30.2 Interpolation Scheme -- 30.3 Structural Parameters -- 30.4 Mechanical, Elastic and Lattice Vibronic Properties -- 30.5 Thermal Properties -- 30.6 Energy Band Parameters -- 30.7 Optical Properties -- 30.8 Carrier Transport Properties -- References -- 31 Group III Nitrides -- 31.1 Crystal Structures of Nitrides -- 31.2 Lattice Parameters of Nitrides -- 31.3 Mechanical Properties of Nitrides -- 31.4 Thermal Properties of Nitrides -- 31.5 Electrical Properties of Nitrides -- 31.6 Optical Properties of Nitrides -- 31.7 Properties of Nitride Alloys -- 31.8 Doped GaN -- 31.9 Defects in GaN -- 31.10 GaN-Based Nanostructures -- 31.11 Summary and Conclusions -- References -- 32 Electron Transport Within III-V Nitride Semiconductors -- 32.1 Electron Transport Within Semiconductors and the Monte Carlo Simulation Approach -- 32.2 Steady-State and Transient Electron Transport Within Bulk Wurtzite GaN, AlN, and InN -- 32.3 Electron Transport Within III-V Nitride Semiconductors: A Review -- 32.4 Conclusions -- References -- 33 II-IV Semiconductors for Optoelectronics: CdS, CdSe, CdTe -- 33.1 Background -- 33.2 Solar Cells -- 33.3 Radiation Detectors -- 33.4 Conclusions -- References -- 34 II-VI Narrow Bandgap Semiconductors: Optoelectronics -- 34.1 Overview -- 34.2 Applications and Sensor Design -- 34.3 Photoconductive Detectors in HgCdTe -- 34.4 Sprite Detectors -- 34.5 Introduction to Photovoltaic Devices in HgCdTe.

34.6 Manufacturing Technology for Photodiode Arrays.

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