Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method. (Record no. 869)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 02983nam a22004333i 4500 |
| 001 - CONTROL NUMBER | |
| control field | EBC5338881 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | MiAaPQ |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20240724113110.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d | |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cnu|||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 240724s2017 xx o ||||0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9789674611231 |
| Qualifying information | (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9789674611385 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (MiAaPQ)EBC5338881 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (Au-PeEL)EBL5338881 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (CaPaEBR)ebr11540395 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)1031337703 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | MiAaPQ |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | MiAaPQ |
| Modifying agency | MiAaPQ |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7871.15.S56 .C443 2017 |
| 082 0# - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.38152 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Cheah, Sook Fong. |
| 245 10 - TITLE STATEMENT | |
| Title | Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Gelugor : |
| Name of producer, publisher, distributor, manufacturer | Penerbit USM, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2017. |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Date of production, publication, distribution, manufacture, or copyright notice | ©2017. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (65 pages) |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Cover -- Half Title Page -- Title Page -- Copyright Page -- Contents -- List of Tables -- List of Figures -- List of Symbols -- Preface -- List of Abbreviations -- 1 Introduction -- 2 Overview of the Fabrication of Porous GaN via Wet Etching Method -- 2.1 Chemical etching -- 2.2 Anodic etching -- 2.3 Metal-assisted electroless etching -- 2.4 UV-assisted photoelectrochemical etching -- 3 Attenuated Total Reflection Study of Porous Semiconductor -- 4 Methodology -- 4.1 Sample preparation -- 4.2 Experimental set-up for electrochemical etching approach -- 4.3 Characterizations -- 4.3.1 FESEM measurement -- 4.3.2 Polarized IR-ATR Measurement -- 4.3.3 PL measurement -- 4.3.4 ATR curve fitting -- 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films -- 5.1 FESEM analysis -- 5.2 p-polarized ATR study -- 5.3 PL analysis -- 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 6.1 FESEM analysis -- 6.2 p-polarized ATR study -- 6.3 PL analysis -- 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films -- 7.1 FESEM analysis -- 7.2 p-polarized ATR study -- 8 Conclusion -- Appendix -- References -- Index -- Back Cover. |
| 588 ## - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Description based on publisher supplied metadata and other sources. |
| 590 ## - LOCAL NOTE (RLIN) | |
| Local note | Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicon carbide. |
| 655 #4 - INDEX TERM--GENRE/FORM | |
| Genre/form data or focus term | Electronic books. |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Ng, Sha Shiong. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| Main entry heading | Cheah, Sook Fong |
| Title | Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method |
| Place, publisher, and date of publication | Gelugor : Penerbit USM,c2017 |
| International Standard Book Number | 9789674611385 |
| 797 2# - LOCAL ADDED ENTRY--CORPORATE NAME (RLIN) | |
| Corporate name or jurisdiction name as entry element | ProQuest (Firm) |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=5338881">https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=5338881</a> |
| Public note | Click to View |
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