Silicon Carbide : (Record no. 59797)
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| 000 -LEADER | |
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| fixed length control field | 08087nam a22004813i 4500 |
| 001 - CONTROL NUMBER | |
| control field | EBC3018650 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | MiAaPQ |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20240729124105.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d | |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cnu|||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 240724s2011 xx o ||||0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9781611226782 |
| Qualifying information | (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9781611223125 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (MiAaPQ)EBC3018650 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (Au-PeEL)EBL3018650 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (CaPaEBR)ebr10661588 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)847645933 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | MiAaPQ |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | MiAaPQ |
| Modifying agency | MiAaPQ |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TP261.C3 -- S46 2011eb |
| 082 0# - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 620.193 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Vanger, Sofia H. |
| 245 10 - TITLE STATEMENT | |
| Title | Silicon Carbide : |
| Remainder of title | New Materials, Production Methods and Applications. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Hauppauge : |
| Name of producer, publisher, distributor, manufacturer | Nova Science Publishers, Incorporated, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2011. |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Date of production, publication, distribution, manufacture, or copyright notice | ©2011. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (267 pages) |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 490 1# - SERIES STATEMENT | |
| Series statement | Materials Science and Technologies |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Intro -- SILICON CARBIDE: NEW MATERIALS, PRODUCTION METHODS AND APPLICATIONS -- SILICON CARBIDE: NEW MATERIALS, PRODUCTION METHODS AND APPLICATIONS -- CONTENTS -- PREFACE -- Chapter 1 ETCHING AND THIN FILM FORMATION OF SILICON CARBIDE USING HIGHLY REACTIVE GASES -- 1. INTRODUTION -- 1.1. Silicon Carbide -- 1.2. Dry Etching -- 1.3. Film Deposition -- 2. POLYCRYSTALLINE 3C-SILICON CARBIDE ETCHING USING CHLORINE TRIFLUORIDE GAS -- 2.1. Reactor and Processes Using Chlorine Trifluoride Gas -- 2.2. Etch Rate -- 2.3. Surface Morphology and Roughness -- 2.4. Surface Chemical Condition and Etch Rate -- 2.5. Chemical Reactions -- 3. SINGLE-CRYSTALLINE 4H-SILICON CARBIDE ETCHING USING CHLORINE TRIFLUORIDE GAS -- 3.1. Substrate, Reactor and Process -- 3.2. Numerical Calculation of Etch Rate -- 3.3. Etch Rate -- 3.4. Surface Reaction Rate Constant -- 3.5. Etch Rate Behavior -- 3.6. Safe Design of Reactor System -- 3.7. Surface Morphology -- 3.8. Surface Morphology Behavior and Its Rate Process -- 3.9. Etch Pits and Crystalline Defect -- 4. POLYCRYSTALLINE SILICON CARBIDE FILM DEPOSITION USING MONOMETHYLSILANE GAS AT LOW TEMPERATURES -- 4.1. Reactor and Process -- 4.2. Thermal Decomposition of Monomethylsilane -- 4.3. Film Deposition from Monomethylsilane -- 4.4. Film Deposition from Monomethylsilane and Hydrogen Chloride -- 4.5. Chemical Reaction in Monomethylsilane and Hydrogen Chloride System -- 4.6. Film Deposition Rate -- 4.7. Surface Chemical Process -- 4.8. Hydrogen Chloride Gas Flow Rate and Silicon Carbide Film Thickness -- 4.9. Surface Morphology -- 4.10. Room Temperature Deposition -- 4.11. Robustness of Film Formed at Room Temperature -- 4.12. Film Formation Mechanism at Room Temperature -- 5. SUMMARY -- ACKNOWLEDGMENTS -- REFERENCES. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Chapter 2 SILICON CARBIDE PARTICULATE REINFORCED ALUMINUM ALLOYS MATRIX COMPOSITES FABRICATED BY SQUEEZE CASTING METHOD -- ABSTRACT -- 1. INTRODUCTION -- 2. MATRIX MATERIALS AND REINFORCEMENTS -- 2.1. Matrix Materials -- 2.2. Reinforcements -- 3. PRODUCTION METHOD OF MMCS -- 3.1. Solid-Phase Processes -- 3.1.1. Powder Metallurgy -- 3.1.2. High Energy-High-Rate Process -- 3.2. Two Phase Processes -- 3.2.1. Spray Deposition -- 3.2.2. Rheocasting -- 3.2.3. Variable Co-Deposition of Multiphase Materials (VCM) -- 3.3. Liquid-Phase Processes -- Silicon Carbide, SiC -- Aluminum Oxide, Al2O3 -- 3.3.1. Sand and Die Casting -- 3.3.2. Centrifugal Casting Method -- 3.3.3. Compocasting -- 3.3.4. Pressure Casting -- 3.3.5. Investment Casting -- 3.3.6. Vacuum Infiltration Process -- 3.3.7. Vortex Method -- 3.3.8. Squeeze Casting -- 4. PREPARATION AND PROPERTIES OF CAST ALUMINUM-CERAMIC PARTICLE REINFORCED MMCS -- 4.1. Wettability of SiC with Al and Al Alloys -- 4.2. Casting Fluidity -- 4.3. Effect of Pressure -- 5. PROPERTIES OF AL/SICP MMCS PRODUCED BY DIRECT SQUEEZE CASTING METHOD -- 5.1. Experimental Details -- 5.2. Results and Discussion -- 5.2.1. Microstructure -- 5.2.2. Density -- 5.2.3. Hardness -- 5.2.4. Tensile Test Properties -- 5.2.4.1. Elastic Modulus -- 5.2.4.2. Strength -- 5.2.4.3. Ductility -- 5.2.5. Fracture -- 3.3. Friction and Wear Behavior -- 5.5. Toughness and Impact Resistance -- 5.6. Fatigue Resistance -- 5.7. Elevated Temperature Properties -- CONCLUSIONS -- REFERENCES -- Chapter 3 MICROSTRUCTURE OF SILICON CARBIDE NANOWIRES -- ABSTRACT -- INTRODUCTION -- PLANAR DEFECTS -- WHOLE PROFILE ANALYSIS OF X-RAY DIFFRACTION PATTERN -- CORE-SHELL MODEL OF SIC NANOWIRES -- AMORPHOUS STRUCTURE -- GROWTH MECHANISM OF SIC NANOWIRES -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- Chapter 4 DUCTILE REGIME MATERIAL REMOVAL OF SILICON CARBIDE (SIC). |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ABSTRACT -- INTRODUCTION -- DUCTILE REGIME MACHINING -- CHIP FORMATION -- HIGH PRESSURE PHASE TRANSFORMATION (HPPT) -- DUCTILE TO BRITTLE TRANSITION (DBT) OF A SINGLE-CRYSTAL 4H-SIC WAFER -- Introduction -- Experimental Details -- Results and Discussion -- Summary -- DUCTILE REGIME SINGLE POINT DIAMOND TURNING OF CVD-SIC -- Introduction -- Experimental Details -- Equipment Setup -- Diamond Tooling -- Single Point Diamond Turning (SPDT) -- Surface Finish -- SPDT of CVD Coated SiC -- Results and Discussion -- Subsurface Damage Analysis -- Laser Raman Spectroscopy -- Scanning Acoustic Microscopy (SAcM) -- Summary -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- Chapter 5 COMPUTER SIMULATION ON THE NANOMECHANICAL PROPERTIES OF SIC NANOWIRES -- ABSTRACT -- 1. INTRODUCTION -- 2. FABRICATION AND NOVEL PROPERTIES OF ONE-DIMENTIONAL SIC STRUCTURES -- 3. SIMULATION DETAILS -- 3.1. Atomic Potentials -- 3.2. Simulation Setup -- 4. RESULTS -- 4.1. Mechanical Properties of Perfect [111]-Oriented SiC Nanowires -- 4.2. Amorphous Coating Effect on the Mechanical Behavior of SiC Nanowires -- 4.3. Mechanical Behavior of Twinned SiC Nanowires -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- Chapter 6 POTENTIALITIES AND LIMITATIONS OF SIC IN THE LIQUID-STATE PROCESSING OF AL-MMCS -- ABSTRACT -- 1. INTRODUCTION -- 2. THE LIQUID STATE PROCESSING OF AL/SIC COMPOSITES -- 2.1. Assisted Infiltration: Pressure Die Casting and Squeeze Casting Techniques -- 2.2. The Pressureless, Non-Assisted or Spontaneous Infiltration Technique -- 3. POTENTIAL INTERFACIAL REACTIONS BETWEEN SIC AND ALUMINUM -- 4. ADVANTAGES AND LIMITATIONS OF THE LIQUID STATE PROCESSING OF AL/SIC COMPOSITES -- CONCLUDING REMARKS -- REFERENCES -- Chapter 7 EFFECTS OF ION IMPLANTATION IN SILICON CARBIDE -- ABSTRACT -- INTRODUCTION -- ROOM TEMPERATURE IMPLANTATION -- IMPLANTATION AT ELEVATED TEMPERATURE. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | ANNEALING -- SWELLING -- CHANGE OF MECHANICAL PROPERTIES -- CONCLUSION -- REFERENCES -- Chapter 8 RECENT PROGRESS IN THE PREPARATION TECHNOLOGIES FOR SILICON CARBIDE NANOMATERIALS -- ABSTRACT -- 1. INTRODUCTION -- 2. PROPERTIES OF SILICON CARBIDE -- 3. SOURCES OF CARBON AND SILICA FOR PRODUCING SICNM -- I. Sources of Carbon -- II. Sources of Silica -- 4. PREPARATION TECHNOLOGIES -- I. Sol-Gel Technology -- II. Thermal Synthesis -- III. Carbothermal Reduction -- IV. Chemical Vapour Deposition -- V. Miscellaneous -- CONCLUDING REMARKS -- REFERENCES -- Chapter 9 CONVERSION OF SILICON CARBIDE TO CRYSTALLINE FULLERITE -- ABSTRACT -- 1. INTRODUCTION -- 2. EXPERIMENTAL -- 3. RESULTS AND DISCUSSION -- ACKNOWLEDGMENT -- REFERENCES -- INDEX. |
| 588 ## - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Description based on publisher supplied metadata and other sources. |
| 590 ## - LOCAL NOTE (RLIN) | |
| Local note | Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Silicon carbide. |
| 655 #4 - INDEX TERM--GENRE/FORM | |
| Genre/form data or focus term | Electronic books. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| Main entry heading | Vanger, Sofia H. |
| Title | Silicon Carbide: New Materials, Production Methods and Applications |
| Place, publisher, and date of publication | Hauppauge : Nova Science Publishers, Incorporated,c2011 |
| International Standard Book Number | 9781611223125 |
| 797 2# - LOCAL ADDED ENTRY--CORPORATE NAME (RLIN) | |
| Corporate name or jurisdiction name as entry element | ProQuest (Firm) |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | Materials Science and Technologies |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=3018650">https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=3018650</a> |
| Public note | Click to View |
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