Space Microelectronics Volume 2 : (Record no. 2959)
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| 000 -LEADER | |
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| fixed length control field | 11251nam a22004813i 4500 |
| 001 - CONTROL NUMBER | |
| control field | EBC5430739 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | MiAaPQ |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20240724113235.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d | |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cnu|||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 240724s2017 xx o ||||0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9781630814694 |
| Qualifying information | (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9781630812591 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (MiAaPQ)EBC5430739 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (Au-PeEL)EBL5430739 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)1041880876 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | MiAaPQ |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | MiAaPQ |
| Modifying agency | MiAaPQ |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7867 .B456 2017 |
| 082 0# - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.3815 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Belous, Anatoly. |
| 245 10 - TITLE STATEMENT | |
| Title | Space Microelectronics Volume 2 : |
| Remainder of title | Integrated Circuit Design for Space Applications. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1st ed. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Norwood : |
| Name of producer, publisher, distributor, manufacturer | Artech House, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2017. |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Date of production, publication, distribution, manufacture, or copyright notice | ©2017. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (629 pages) |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Intro -- Space Microelectronics Volume 2: Integrated Circuit Design for Space Applications -- Introduction -- Preface -- Chapter 1 Considerations for Selection and Application of Foreign Electronic Component Bases in Designing Domestic Spacecraft -- 1.1 General Problems of ECB Selection for REE of Space Application -- 1.2 Restriction on Export of Foreign-Made Electronic Components to Russia -- 1.2.1 Restriction of ECB Exports from the United States -- 1.2.2 Restriction on ECB Exports from Europe and Other Countries -- 1.2.3 International Export Control Organizations -- 1.3 Peculiarities of Application of Foreign-Made Industrial ECB in Rocket and Space Technology -- 1.4 Counterfeit Microelectronic Products and Methods of Their Detection -- 1.4.1 Types of Counterfeit Components -- 1.4.2 Effective Methods of Detecting Counterfeit Products -- 1.4.3 Electric Testing of Microelectronic Products for Space Application -- 1.5 Peculiarities of Selection and Application of Foreign Processors in Domestic Spacecraft -- 1.5.1 Application Aspects of Foreign Processors in Domestic Spacecraft -- 1.5.2 Versions and Qualifications of UT 699 and GR 712 Microprocessors -- 1.5.3 Architecture and Hardware Features of UT 699 and GR 712 Microprocessors of Leon 3FT Family -- 1.5.4 Peculiarities of Microprocessor Leon 3 Programming -- 1.6 Radiation-Tolerant DC Converters for Space and Military Applications -- 1.6.1 Total Ionizing Dose (TID) -- 1.6.2 Enhanced Low-Dose Rate Sensitivity (ELDRS) -- 1.6.3 Single Event Effects (SEE) -- 1.6.4 Analysis of Parameter Limits in Worst-Case Scenarios -- 1.6.5 MIL-PRF-38534 Standard Class K Requirements -- 1.6.6 Absence of Optocouplers in Hybrid DC-DC Converters -- 1.7 Best Practices of Work Arrangement for Producing Electronic Components of Space System On-Board Equipment -- 1.8 Accelerated Reliability Testing of ECB SA. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 1.9 Analysis of Test Results for Microcircuits Purchased in Russia Between 2009 and 2011 -- References -- Chapter 2 Peculiarities of the Technological Process of Production and Basic Constructions of Submicron Transistors and Schottky Diodes -- 2.1 On the Terminology of Submicron Microelectronics -- 2.2 Tendencies and Perspectives of Modern Technology Development in Microelectronics -- 2.2.1 Scaling Problem -- 2.2.2 Modern Submicron Technology: An Example of Its Implementation for Microprocessor Production -- 2.3 Peculiarities of Submicron MOS Transistors -- 2.3.1 MOS Transistors Structures in VLSIC -- 2.3.2 Methods to Improve MOS Transistor Properties -- 2.3.3 MOS Transistors with the Structure Silicon on Insulator -- 2.3.4 Transistors with Double, Triple, and Cylindrical Gates -- 2.3.5 Other Types of Transistor Structures -- 2.3.6 The Peculiarities of Transistors for Analog Applications -- 2.4 Constructional-Technological Peculiarities of High-Temperature Schottky Diodes -- 2.4.1 Physical Basics of Schottky Diode Functioning -- 2.4.2 Design-Technological Peculiarities of the Formation of High-Temperature Schottky Diodes -- 2.4.3 Methods of Ensuring Minimum Reverse Current and Minimum Direct Voltage -- 2.4.4 Methods of Ensuring Minimum Direct Voltage and Maximum Reverse Voltage -- 2.5 Design-Technological Peculiarities of Forming the Structures of the Schottky Diode with Increased Resistance to Static Electricity Discharges -- References -- Selected Bibliography -- Chapter 3 Energy Consumption Minimization Methods for Microelectronic Devices -- 3.1 Main Trends in Energy Consumption Parameters of Microelectronic Devices -- 3.2 Ways to Reduce the Power Dissipation Rate in CMOS LSIC -- 3.3 Main Sources of Power Dissipation in CMOS LSICs -- 3.4 Logical Design of CMOS LSIC with Reduced Power Consumption. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 3.4.1 Basic Logical Synthesis of CMOS Microcircuits with Reduced Power Consumption -- 3.4.2 Determining the Sources of Power Dissipation in CMOS Microcircuits -- 3.4.3 Probabilistic Assessment of Optimization Options Based on Predicted Switching Activity of Microcircuit Units -- 3.4.4 The Choice of Element Basis While Designing CMOS VLSICs with Reduced Power Consumption -- 3.4.5 Logic Synthesis of CMOS LSIC in Element Library Basis -- 3.4.6 Optimization of Two-Level Logical Circuits Regarding Power Dissipation -- 3.4.7 Selection of Basic Gates of Technology-Independent Functional Circuits -- 3.4.8 Optimization of Multilevel Logical Circuits Composed of Multi-Input Gates -- 3.4.9 Optimization of Multilevel Logical Circuits Composed of Two-Input Gates -- 3.4.10 Technological Representation -- 3.4.11 Estimation of Power Consumption by the Designed CMOS LSICs at the Logical and Circuit Levels -- 3.4.12 Technology of Designing CMOS LSICs with Reduced Power Consumption Using PSLS -- 3.4.13 PSLS Software Complex Architecture -- 3.4.14 Functional Capabilities of the Software Complex PSLS -- 3.5 Organization Peculiarities of the Reduced Power Consumption in Modern Interface LSICs -- 3.5.1 RS-485 Interface Transmitter-Receiver Microcircuits -- 3.5.2 RS-232 Interface Transceiver Microcircuits -- 3.5.3 Design and Schematic-Technical Peculiarities of Designing Interface of IC Voltage Comparators with Reduced Supply Voltage -- 3.5.4 Peculiarities of Designing Electrical Circuits of Transmitter Units of Interface LSICs with Reduced Power Consumption -- 3.5.5 Thermally Independent Base Voltage Source, Equal to the Width of the Bandgap of the Semiconductor -- 3.5.6 Design Options for Thermally Independent Base Voltage Sources -- 3.5.7 Circuit Configuration Methods of Increasing the Resistance of Microcircuits to the Hot Electrons Effect -- References. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Chapter 4 Peculiarities of Radiation Impact on Submicron Integrated Circuits -- 4.1 Physical Mechanisms of Radiation Impact on Submicron CMOS Integrated Circuits -- 4.1.1 Property Recovery for Radiation-Exposed MIC Devices -- 4.1.2 Impact of the Exposure Conditions on the Radiation Tolerance of MIC Devices -- 4.2 Influence of Radiation on Analog Bipolar Integrated Circuits -- 4.2.1 Radiation Effects in Integrated Operational Amplifiers -- 4.2.2 Radiation Effects in Integrated Voltage Comparators -- 4.3 The Main Methods of Ensuring Radiation Tolerance of Integrated Circuits -- 4.4 Radiation Tolerance of Modern and Advanced ICs -- 4.5 Recommended Set of Test Elements For Experimental Research on the Radiation Impact on the Silicon Microcircuit Properties -- 4.5.1 Element Base of Logic CMOS of Integrated Circuits -- 4.5.2 The Element Base of Electrically Erasable Programmable Read-Only Memories (EEPROM) -- 4.5.3 Logic CMOS IC -- 4.5.4 Memory CMOS LSIC -- 4.5.5 CMOS LSIC SRAM on the Basis of SOI Structures -- 4.5.6 BiCMOS LSIC -- 4.6 Equipment and Methods of Irradiating Test Structures and Studied Samples of Microcircuits -- 4.7 Methods of Measuring Electric Parameters of Test Structures After Irradiation -- 4.7.1 Methods of EEPROM Parameters' Control -- 4.8 The Experimental Research Results of the Penetrating Radiation Impact on the Parameters of Bipolar Transistor Structures -- 4.9 Experimental Research of the Ionizing Radiation Impact on the Parameters of Bipolar Analog Integrated Circuits -- 4.10 Results of Experimental Research on the Impact of Ionizing Radiation on the Parameters of Transistor MOS Structures and Integrated Circuits Based on Them -- 4.10.1 The Study of the Gamma-Radiation Impact on the Parameters of Transistor MOS Structures. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 4.10.2 Experimental Studies of the Gamma-Radiation Impact on the MOS Capacitors and Transistor MOS Structure Parameters: Submicron CMOS IC Elements -- 4.10.3 The Peculiarities of the Gamma-Radiation Impact on the Parameters of the MOS Cell of EEPROM -- 4.10.4 Experimental Research of the Penetrating Radiation Impact on the Parameters of Logic CMOS IC -- 4.10.5 Impact of the Ionizing Radiation on the Parameters of Memory CMOS LSIC -- 4.10.6 Experimental Study of the Radiation Impact on the Parameters of MOS/SOI Structures and CMOS LSI RAM Based on Them -- 4.10.7 Experimental Research on Impact of the Penetrating Radiation on the Parameters of Logic BiCMOS LSIC -- 4.11 Peculiarities of Using Simulation Methods in Studying of the Radiation Effects in BiCMOS Microcircuits -- 4.12 The Peculiarities of the Mechanisms of the Influence of Space Factors on the Formation of Local Radiation Effects -- 4.13 Experimental Studies of Radiation-Resistant Hybrid DC/DC Converters of Chinese Manufacture -- References -- Chapter 5 Methods of Prediction and Increase of the Radiation Tolerance of Bipolar and CMOS Integrated Microcircuits -- 5.1 Prediction Methods of Radiation Tolerance of CMOS LSI -- 5.1.1 Calculation-Experimental Prediction Methods of MOS Tool Radiation Tolerance -- 5.1.2 Prediction (Selection) Method of CMOS IC According to Radiation Tolerance -- 5.2 Calculation-Experimental Methods for Calculation of Radiation Tolerance of Bipolar and BiCMOS Tools -- 5.3 Calculation-Experimental Method of Predicting Radiation Tolerance of EEPROM MOS Memory Elements -- 5.4 Methods of Increasing IC Resistance to the Impact of Penetrating Radiation -- 5.4.1 Construction-Technological Methods of Increasing Radiation Tolerance of CMOS and BiCMOS Microcircuits -- 5.4.2 Standard Construction and Circuit Configuration Methods of Increasing Radiation Tolerance of ICs. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 5.4.3 New Construction and Circuit Configuration Methods of Increasing Radiation Tolerance of CMOS LSIC. |
| 588 ## - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Description based on publisher supplied metadata and other sources. |
| 590 ## - LOCAL NOTE (RLIN) | |
| Local note | Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Electronic circuit design. |
| 655 #4 - INDEX TERM--GENRE/FORM | |
| Genre/form data or focus term | Electronic books. |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Saladukha. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| Main entry heading | Belous, Anatoly |
| Title | Space Microelectronics Volume 2: Integrated Circuit Design for Space Applications |
| Place, publisher, and date of publication | Norwood : Artech House,c2017 |
| International Standard Book Number | 9781630812591 |
| 797 2# - LOCAL ADDED ENTRY--CORPORATE NAME (RLIN) | |
| Corporate name or jurisdiction name as entry element | ProQuest (Firm) |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=5430739">https://ebookcentral.proquest.com/lib/orpp/detail.action?docID=5430739</a> |
| Public note | Click to View |
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