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Flat Panel Display Manufacturing.

By: Contributor(s): Material type: TextTextSeries: Wiley Series in Display Technology SeriesPublisher: Newark : John Wiley & Sons, Incorporated, 2018Copyright date: ©2018Edition: 1st edDescription: 1 online resource (495 pages)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9781119161363
Subject(s): Genre/Form: Additional physical formats: Print version:: Flat Panel Display ManufacturingDDC classification:
  • 621.3815/422
LOC classification:
  • TK7882.I6 .F538 2018
Online resources:
Contents:
Cover -- Title Page -- Copyright -- Contents -- List of Contributors -- Series Editor's Foreword -- Preface -- Chapter 1 Introduction -- 1.1 Introduction -- 1.2 Historic Review of TFT-LCD Manufacturing Technology Progress -- 1.2.1 Early Stage TFT and TFT-Based Displays -- 1.2.2 The 1990s: Initiation of TFT-LCD Manufacturing and Incubation of TFT-LCD Products -- 1.2.3 Late 1990s: Booming of LCD Desktop Monitor and Wide Viewing Angle Technologies -- 1.2.4 The 2000s: A Golden Time for LCD-TV Manufacturing Technology Advances -- 1.3 Analyzing the Success Factors in LCD Manufacturing -- 1.3.1 Scaling the LCD Substrate Size -- 1.3.2 Major Milestones in TFT-LCD Manufacturing Technology -- 1.3.2.1 First Revolution: AKT Cluster PECVD Tool in 1993 -- 1.3.2.2 Second Revolution: Wide Viewing Angle Technology in 1997 -- 1.3.2.3 Third Revolution: LC Drop Filling Technology in 2003 -- 1.3.3 Major Stepping Stones Leading to the Success of Active Matrix Displays -- References -- Chapter 2 TFT Array Process Architecture and Manufacturing Process Flow -- 2.1 Introduction -- 2.2 Material Properties and TFT Characteristics of a-Si, LTPS, and Metal Oxide TFTs -- 2.2.1 a-Si TFT -- 2.2.2 LTPS TFT -- 2.2.2.1 Excimer Laser Annealing (ELA) -- 2.2.3 Amorphous Oxide Semiconductor TFTs -- 2.3 a-Si TFT Array Process Architecture and Process Flow -- 2.3.1 Four-Mask Count Process Architecture for TFT-LCDs -- 2.4 Poly-Si TFT Architecture and Fabrication -- 2.5 Oxide Semiconductor TFT Architecture and Fabrication -- 2.6 TFT LCD Applications -- 2.7 Development of SLS-Based System on Glass Display [1, 11, 14, 15] -- References -- Chapter 3 Color Filter Architecture, Materials, and Process Flow -- 3.1 Introduction -- 3.2 Structure and Role of the Color Filter -- 3.2.1 Red, Green, and Blue (RGB) Layer -- 3.2.1.1 Color Coordinate and Color Gamut -- 3.2.2 Black Matrix.
3.2.3 Overcoat and Transparent Electrode -- 3.2.4 Column Spacer -- 3.3 Color Filter Manufacturing Process Flow -- 3.3.1 Unit Process -- 3.3.1.1 Formation of Black Matrix -- 3.3.1.2 Formation of RGB Layer -- 3.3.1.3 Overcoat (OC) -- 3.3.1.4 Formation of ITO Electrodes -- 3.3.1.5 Column Spacer (Pattern Spacer) -- 3.3.2 Process Flow for Different LC Mode -- 3.3.2.1 Color Filter for the TN Mode -- 3.3.2.2 Color Filter for the IPS Mode -- 3.3.2.3 Color Filter for the VA Mode -- 3.4 New Color Filter Design -- 3.4.1 White Color (Four Primary Colors) Technology -- 3.4.2 Color Filter on TFT -- References -- Chapter 4 Liquid Crystal Cell Process -- 4.1 Introduction -- 4.2 Liquid Crystal Cell Process -- 4.2.1 Alignment Layer Treatment -- 4.2.2 Process of Applying PI Layers -- 4.2.3 Rubbing Process -- 4.2.4 Photo-Alignment Process -- 4.2.5 LC Filling Process -- 4.2.5.1 Vacuum Filling Method -- 4.2.5.2 End Seal Process -- 4.2.5.3 One Drop Filling (ODF) Method -- 4.2.6 Vacuum Assembly Process -- 4.2.7 Polarizer Attachment Process -- 4.3 Conclusions -- Acknowledgments -- References -- Chapter 5 TFT-LCD Module and Package Process -- 5.1 Introduction -- 5.2 Driver IC Bonding: TAB and COG -- 5.3 Introduction to Large-Panel JI Process -- 5.3.1 COF Bonding -- 5.3.1.1 Edge Clean -- 5.3.1.2 ACF Attachment -- 5.3.1.3 COF Pre-Bonding -- 5.3.1.4 COF Main Bonding -- 5.3.1.5 Lead Check -- 5.3.1.6 Silicone Dispensing -- 5.3.2 PCB Bonding -- 5.3.3 PCB Test -- 5.3.4 Press Heads: Long Bar or Short Bar -- 5.4 Introduction to Small-Panel JI Process -- 5.4.1 Beveling -- 5.4.2 Panel Cleaning -- 5.4.3 Polarizer Attachment -- 5.4.4 Chip on Glass (COG) Bonding -- 5.4.5 FPC on Glass (FOG) Bonding -- 5.4.6 Optical Microscope (OM) Inspection -- 5.4.7 UV Glue Dispense -- 5.4.8 Post Bonding Inspection (PBI) -- 5.4.9 Protection Glue Dispensing -- 5.5 LCD Module Assembly -- 5.6 Aging.
5.7 Module in Backlight or Backlight in Module -- References -- Chapter 6 LCD Backlights -- 6.1 Introduction -- 6.2 LED Sources -- 6.2.1 GaN Epi-Wafer on Sapphire -- 6.2.2 LED Chip -- 6.2.3 Light Extraction -- 6.2.4 LED Package -- 6.2.5 SMT on FPCB -- 6.3 Light Guide Plate -- 6.3.1 Optical Principles of LGP -- 6.3.2 Optical Pattern Design -- 6.3.3 Manufacturing of LGP -- 6.3.3.1 Injection Molding -- 6.3.3.2 Screen Printing -- 6.3.3.3 Other Methods -- 6.4 Optical Films -- 6.4.1 Diffuser -- 6.4.2 Prism Film -- 6.4.3 Reflector -- 6.4.4 Other Films -- 6.5 Direct-Type BLU -- 6.6 Summary -- References -- Chapter 7 TFT Backplane and Issues for OLED -- 7.1 Introduction -- 7.2 LTPS TFT Backplane for OLED Films -- 7.2.1 Advanced Excimer Laser Annealing (AELA) for Large-Sized AMOLED Displays -- 7.2.2 Line-Scan Sequential Lateral Solidification Process for AMOLED Application -- 7.3 Oxide Semiconductor TFT for OLED -- 7.3.1 Oxide TFT-Based OLED for Large-Sized TVs -- 7.4 Best Backplane Solution for AMOLED -- References -- Chapter 8A OLED Manufacturing Process for Mobile Application -- 8A.1 Introduction -- 8A.2 Current Status of AMOLED for Mobile Display -- 8A.2.1 Top Emission Technology -- 8A.3 Fine Metal Mask Technology (Shadow Mask Technology) -- 8A.4 Encapsulation Techniques for OLEDs -- 8A.4.1 Frit Sealing -- 8A.4.2 Thin-Film Encapsulation -- 8A.5 Flexible OLED technology -- 8A.6 AMOLED Manufacturing Process -- 8A.7 Summary -- References -- Chapter 8B OLED Manufacturing Process for TV Application -- 8B.1 Introduction -- 8B.2 Fine Metal Mask (FMM) -- 8B.3 Manufacturing Process for White OLED and Color Filter Methods -- 8B.3.1 One-Stacked White OLED Device -- 8B.3.2 Two-Stacked White OLED Device -- 8B.3.3 Three-Stacked White-OLED Device -- References -- Chapter 9 OLED Encapsulation Technology -- 9.1 Introduction -- 9.2 Principles Of Oled Encapsulation.
9.2.1 Effect of H2O -- 9.3 Classification Of Encapsulation Technologies -- 9.3.1 Edge Seal -- 9.3.2 Frit Seal -- 9.3.3 Dam and Fill -- 9.3.4 Face Seal -- 9.3.5 Thin-Film Encapsulation (TFE) -- 9.4 Summary -- References -- Chapter 10 Flexible OLED Manufacturing -- 10.1 Introduction -- 10.2 Critical Technologies in Flexible OLED Display -- 10.2.1 High-Temperature PI Film -- 10.2.2 Encapsulation Layer -- 10.2.2.1 Thin-Film Encapsulation (TFE) Method -- 10.2.2.2 Hyrid Encapsulation Method -- 10.2.2.3 Other Encapsulation Methods -- 10.2.2.4 Measurement of Barrier Performance -- 10.2.3 Laser Lift-Off -- 10.2.4 Touch Sensor on F-OLED -- 10.3 Process Flow of F-OLED -- 10.3.1 PI Film Coating and Curing -- 10.3.2 LTPS TFT Backplane Process -- 10.3.3 OLED Deposition Process -- 10.3.4 Thin-Film Encapsulation -- 10.3.5 Laser Lift-Off -- 10.3.6 Lamination of Backing Plastic Film and Cut to Cell Size -- 10.3.7 Touch Sensor Attach -- 10.3.8 Circular Polarizer Attach -- 10.3.9 Module Assembly (Bonding Drive IC) -- 10.4 Foldable OLED -- 10.5 Summary -- References -- Chapter 11A Metal Lines and ITO PVD -- 11A.1 Introduction -- 11A.1.1 Basic Requirements of Metallization for Display -- 11A.1.2 Thin-Film Deposition by Sputtering -- 11A.2 Metal Line Evolution in Past Years of TFT-LCD -- 11A.2.1 Gate Line Metals -- 11A.2.1.1 Al and Al Alloy Electrode -- 11A.2.1.2 Cu Electrode -- 11A.2.2 Data line (Source/Drain) Metals -- 11A.2.2.1 Data Al Metal -- 11A.2.2.2 Data Cu Metal -- 11A.2.2.3 Data Chromium (Cr) Metal -- 11A.2.2.4 Molybdenum (Mo) Metal -- 11A.2.2.5 Titanium (Ti) Metal -- 11A.3 Metallization for OLED Display -- 11A.3.1 Gate Line Metals -- 11A.3.2 Source/Drain Metals -- 11A.3.3 Pixel Anode -- 11A.4 Transparent Electrode -- References -- Chapter 11B Thin-Film PVD: Materials, Processes, and Equipment -- 11B.1 Introduction -- 11B.2 Sputtering Method.
11B.3 Evolution of Sputtering Equipment for FPD Devices -- 11B.3.1 Cluster Tool for Gen 2 Size -- 11B.3.2 Cluster Tool for Gen 4.5 to Gen 7 Size -- 11B.3.3 Vertical Cluster Tool for Gen 8 Size -- 11B.4 Evolution of Sputtering Cathode -- 11B.4.1 Cathode Structure Evolution -- 11B.4.2 Dynamic Multi Cathode for LTPS -- 11B.4.3 Cathode Selection Strategy -- 11B.5 Transparent Oxide Semiconductor (TOS) Thin-Film Deposition Technology -- 11B.5.1 Deposition Equipment for TOS-TFT -- 11B.5.2 New Cathode Structure for TOS-TFT -- 11B.6 Metallization Materials and Deposition Technology -- References -- Chapter 11C Thin-Film PVD (Rotary Target) -- 11C.1 Introduction -- 11C.2 Source Technology -- 11C.2.1 Planar Cathodes -- 11C.2.2 Rotary Cathodes -- 11C.2.3 Rotary Cathode Array -- 11C.3 Materials, Processes, and Characterization -- 11C.3.1 Introduction -- 11C.3.2 Backplane Metallization -- 11C.3.3 Layers for Metal-Oxide TFTs -- 11C.3.4 Transparent Electrodes -- 11C.3.5 Adding Touch Functionality and Improving End-User Experience -- References -- Chapter 12A Thin-Film PECVD (AKT) -- 12A.1 Introduction -- 12A.2 Process Chamber Technology -- 12A.2.1 Electrode Design -- 12A.2.1.1 Hollow Cathode Effect and Hollow Cathode Gradient -- 12A.2.1.2 Gas Flow Control -- 12A.2.1.3 Susceptor -- 12A.2.2 Chamber Cleaning -- 12A.3 Thin-Film Material, Process, and Characterization -- 12A.3.1 Amorphous Si (a-Si) TFT -- 12A.3.1.1 Silicon Nitride (SiN) -- 12A.3.1.2 Amorphous Silicon (a-Si) -- 12A.3.1.3 Phosphorus-Doped Amorphous Silicon (n+ a-Si) -- 12A.3.2 Low-Temperature Poly Silicon (LTPS) TFT -- 12A.3.2.1 Silicon Oxide (SiO) -- 12A.3.2.2 a-Si Precursor Film (Dehydrogenation) -- 12A.3.3 Metal-Oxide (MO) TFT -- 12A.3.3.1 Silicon Oxide (SiO) -- 12A.3.4 Thin-Film Encapsulation (TFE) -- 12A.3.4.1 Barrier Layer (Silicon Nitride) -- 12A.3.4.2 Buffer Layer -- References.
Chapter 12B Thin-Film PECVD (Ulvac).
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Cover -- Title Page -- Copyright -- Contents -- List of Contributors -- Series Editor's Foreword -- Preface -- Chapter 1 Introduction -- 1.1 Introduction -- 1.2 Historic Review of TFT-LCD Manufacturing Technology Progress -- 1.2.1 Early Stage TFT and TFT-Based Displays -- 1.2.2 The 1990s: Initiation of TFT-LCD Manufacturing and Incubation of TFT-LCD Products -- 1.2.3 Late 1990s: Booming of LCD Desktop Monitor and Wide Viewing Angle Technologies -- 1.2.4 The 2000s: A Golden Time for LCD-TV Manufacturing Technology Advances -- 1.3 Analyzing the Success Factors in LCD Manufacturing -- 1.3.1 Scaling the LCD Substrate Size -- 1.3.2 Major Milestones in TFT-LCD Manufacturing Technology -- 1.3.2.1 First Revolution: AKT Cluster PECVD Tool in 1993 -- 1.3.2.2 Second Revolution: Wide Viewing Angle Technology in 1997 -- 1.3.2.3 Third Revolution: LC Drop Filling Technology in 2003 -- 1.3.3 Major Stepping Stones Leading to the Success of Active Matrix Displays -- References -- Chapter 2 TFT Array Process Architecture and Manufacturing Process Flow -- 2.1 Introduction -- 2.2 Material Properties and TFT Characteristics of a-Si, LTPS, and Metal Oxide TFTs -- 2.2.1 a-Si TFT -- 2.2.2 LTPS TFT -- 2.2.2.1 Excimer Laser Annealing (ELA) -- 2.2.3 Amorphous Oxide Semiconductor TFTs -- 2.3 a-Si TFT Array Process Architecture and Process Flow -- 2.3.1 Four-Mask Count Process Architecture for TFT-LCDs -- 2.4 Poly-Si TFT Architecture and Fabrication -- 2.5 Oxide Semiconductor TFT Architecture and Fabrication -- 2.6 TFT LCD Applications -- 2.7 Development of SLS-Based System on Glass Display [1, 11, 14, 15] -- References -- Chapter 3 Color Filter Architecture, Materials, and Process Flow -- 3.1 Introduction -- 3.2 Structure and Role of the Color Filter -- 3.2.1 Red, Green, and Blue (RGB) Layer -- 3.2.1.1 Color Coordinate and Color Gamut -- 3.2.2 Black Matrix.

3.2.3 Overcoat and Transparent Electrode -- 3.2.4 Column Spacer -- 3.3 Color Filter Manufacturing Process Flow -- 3.3.1 Unit Process -- 3.3.1.1 Formation of Black Matrix -- 3.3.1.2 Formation of RGB Layer -- 3.3.1.3 Overcoat (OC) -- 3.3.1.4 Formation of ITO Electrodes -- 3.3.1.5 Column Spacer (Pattern Spacer) -- 3.3.2 Process Flow for Different LC Mode -- 3.3.2.1 Color Filter for the TN Mode -- 3.3.2.2 Color Filter for the IPS Mode -- 3.3.2.3 Color Filter for the VA Mode -- 3.4 New Color Filter Design -- 3.4.1 White Color (Four Primary Colors) Technology -- 3.4.2 Color Filter on TFT -- References -- Chapter 4 Liquid Crystal Cell Process -- 4.1 Introduction -- 4.2 Liquid Crystal Cell Process -- 4.2.1 Alignment Layer Treatment -- 4.2.2 Process of Applying PI Layers -- 4.2.3 Rubbing Process -- 4.2.4 Photo-Alignment Process -- 4.2.5 LC Filling Process -- 4.2.5.1 Vacuum Filling Method -- 4.2.5.2 End Seal Process -- 4.2.5.3 One Drop Filling (ODF) Method -- 4.2.6 Vacuum Assembly Process -- 4.2.7 Polarizer Attachment Process -- 4.3 Conclusions -- Acknowledgments -- References -- Chapter 5 TFT-LCD Module and Package Process -- 5.1 Introduction -- 5.2 Driver IC Bonding: TAB and COG -- 5.3 Introduction to Large-Panel JI Process -- 5.3.1 COF Bonding -- 5.3.1.1 Edge Clean -- 5.3.1.2 ACF Attachment -- 5.3.1.3 COF Pre-Bonding -- 5.3.1.4 COF Main Bonding -- 5.3.1.5 Lead Check -- 5.3.1.6 Silicone Dispensing -- 5.3.2 PCB Bonding -- 5.3.3 PCB Test -- 5.3.4 Press Heads: Long Bar or Short Bar -- 5.4 Introduction to Small-Panel JI Process -- 5.4.1 Beveling -- 5.4.2 Panel Cleaning -- 5.4.3 Polarizer Attachment -- 5.4.4 Chip on Glass (COG) Bonding -- 5.4.5 FPC on Glass (FOG) Bonding -- 5.4.6 Optical Microscope (OM) Inspection -- 5.4.7 UV Glue Dispense -- 5.4.8 Post Bonding Inspection (PBI) -- 5.4.9 Protection Glue Dispensing -- 5.5 LCD Module Assembly -- 5.6 Aging.

5.7 Module in Backlight or Backlight in Module -- References -- Chapter 6 LCD Backlights -- 6.1 Introduction -- 6.2 LED Sources -- 6.2.1 GaN Epi-Wafer on Sapphire -- 6.2.2 LED Chip -- 6.2.3 Light Extraction -- 6.2.4 LED Package -- 6.2.5 SMT on FPCB -- 6.3 Light Guide Plate -- 6.3.1 Optical Principles of LGP -- 6.3.2 Optical Pattern Design -- 6.3.3 Manufacturing of LGP -- 6.3.3.1 Injection Molding -- 6.3.3.2 Screen Printing -- 6.3.3.3 Other Methods -- 6.4 Optical Films -- 6.4.1 Diffuser -- 6.4.2 Prism Film -- 6.4.3 Reflector -- 6.4.4 Other Films -- 6.5 Direct-Type BLU -- 6.6 Summary -- References -- Chapter 7 TFT Backplane and Issues for OLED -- 7.1 Introduction -- 7.2 LTPS TFT Backplane for OLED Films -- 7.2.1 Advanced Excimer Laser Annealing (AELA) for Large-Sized AMOLED Displays -- 7.2.2 Line-Scan Sequential Lateral Solidification Process for AMOLED Application -- 7.3 Oxide Semiconductor TFT for OLED -- 7.3.1 Oxide TFT-Based OLED for Large-Sized TVs -- 7.4 Best Backplane Solution for AMOLED -- References -- Chapter 8A OLED Manufacturing Process for Mobile Application -- 8A.1 Introduction -- 8A.2 Current Status of AMOLED for Mobile Display -- 8A.2.1 Top Emission Technology -- 8A.3 Fine Metal Mask Technology (Shadow Mask Technology) -- 8A.4 Encapsulation Techniques for OLEDs -- 8A.4.1 Frit Sealing -- 8A.4.2 Thin-Film Encapsulation -- 8A.5 Flexible OLED technology -- 8A.6 AMOLED Manufacturing Process -- 8A.7 Summary -- References -- Chapter 8B OLED Manufacturing Process for TV Application -- 8B.1 Introduction -- 8B.2 Fine Metal Mask (FMM) -- 8B.3 Manufacturing Process for White OLED and Color Filter Methods -- 8B.3.1 One-Stacked White OLED Device -- 8B.3.2 Two-Stacked White OLED Device -- 8B.3.3 Three-Stacked White-OLED Device -- References -- Chapter 9 OLED Encapsulation Technology -- 9.1 Introduction -- 9.2 Principles Of Oled Encapsulation.

9.2.1 Effect of H2O -- 9.3 Classification Of Encapsulation Technologies -- 9.3.1 Edge Seal -- 9.3.2 Frit Seal -- 9.3.3 Dam and Fill -- 9.3.4 Face Seal -- 9.3.5 Thin-Film Encapsulation (TFE) -- 9.4 Summary -- References -- Chapter 10 Flexible OLED Manufacturing -- 10.1 Introduction -- 10.2 Critical Technologies in Flexible OLED Display -- 10.2.1 High-Temperature PI Film -- 10.2.2 Encapsulation Layer -- 10.2.2.1 Thin-Film Encapsulation (TFE) Method -- 10.2.2.2 Hyrid Encapsulation Method -- 10.2.2.3 Other Encapsulation Methods -- 10.2.2.4 Measurement of Barrier Performance -- 10.2.3 Laser Lift-Off -- 10.2.4 Touch Sensor on F-OLED -- 10.3 Process Flow of F-OLED -- 10.3.1 PI Film Coating and Curing -- 10.3.2 LTPS TFT Backplane Process -- 10.3.3 OLED Deposition Process -- 10.3.4 Thin-Film Encapsulation -- 10.3.5 Laser Lift-Off -- 10.3.6 Lamination of Backing Plastic Film and Cut to Cell Size -- 10.3.7 Touch Sensor Attach -- 10.3.8 Circular Polarizer Attach -- 10.3.9 Module Assembly (Bonding Drive IC) -- 10.4 Foldable OLED -- 10.5 Summary -- References -- Chapter 11A Metal Lines and ITO PVD -- 11A.1 Introduction -- 11A.1.1 Basic Requirements of Metallization for Display -- 11A.1.2 Thin-Film Deposition by Sputtering -- 11A.2 Metal Line Evolution in Past Years of TFT-LCD -- 11A.2.1 Gate Line Metals -- 11A.2.1.1 Al and Al Alloy Electrode -- 11A.2.1.2 Cu Electrode -- 11A.2.2 Data line (Source/Drain) Metals -- 11A.2.2.1 Data Al Metal -- 11A.2.2.2 Data Cu Metal -- 11A.2.2.3 Data Chromium (Cr) Metal -- 11A.2.2.4 Molybdenum (Mo) Metal -- 11A.2.2.5 Titanium (Ti) Metal -- 11A.3 Metallization for OLED Display -- 11A.3.1 Gate Line Metals -- 11A.3.2 Source/Drain Metals -- 11A.3.3 Pixel Anode -- 11A.4 Transparent Electrode -- References -- Chapter 11B Thin-Film PVD: Materials, Processes, and Equipment -- 11B.1 Introduction -- 11B.2 Sputtering Method.

11B.3 Evolution of Sputtering Equipment for FPD Devices -- 11B.3.1 Cluster Tool for Gen 2 Size -- 11B.3.2 Cluster Tool for Gen 4.5 to Gen 7 Size -- 11B.3.3 Vertical Cluster Tool for Gen 8 Size -- 11B.4 Evolution of Sputtering Cathode -- 11B.4.1 Cathode Structure Evolution -- 11B.4.2 Dynamic Multi Cathode for LTPS -- 11B.4.3 Cathode Selection Strategy -- 11B.5 Transparent Oxide Semiconductor (TOS) Thin-Film Deposition Technology -- 11B.5.1 Deposition Equipment for TOS-TFT -- 11B.5.2 New Cathode Structure for TOS-TFT -- 11B.6 Metallization Materials and Deposition Technology -- References -- Chapter 11C Thin-Film PVD (Rotary Target) -- 11C.1 Introduction -- 11C.2 Source Technology -- 11C.2.1 Planar Cathodes -- 11C.2.2 Rotary Cathodes -- 11C.2.3 Rotary Cathode Array -- 11C.3 Materials, Processes, and Characterization -- 11C.3.1 Introduction -- 11C.3.2 Backplane Metallization -- 11C.3.3 Layers for Metal-Oxide TFTs -- 11C.3.4 Transparent Electrodes -- 11C.3.5 Adding Touch Functionality and Improving End-User Experience -- References -- Chapter 12A Thin-Film PECVD (AKT) -- 12A.1 Introduction -- 12A.2 Process Chamber Technology -- 12A.2.1 Electrode Design -- 12A.2.1.1 Hollow Cathode Effect and Hollow Cathode Gradient -- 12A.2.1.2 Gas Flow Control -- 12A.2.1.3 Susceptor -- 12A.2.2 Chamber Cleaning -- 12A.3 Thin-Film Material, Process, and Characterization -- 12A.3.1 Amorphous Si (a-Si) TFT -- 12A.3.1.1 Silicon Nitride (SiN) -- 12A.3.1.2 Amorphous Silicon (a-Si) -- 12A.3.1.3 Phosphorus-Doped Amorphous Silicon (n+ a-Si) -- 12A.3.2 Low-Temperature Poly Silicon (LTPS) TFT -- 12A.3.2.1 Silicon Oxide (SiO) -- 12A.3.2.2 a-Si Precursor Film (Dehydrogenation) -- 12A.3.3 Metal-Oxide (MO) TFT -- 12A.3.3.1 Silicon Oxide (SiO) -- 12A.3.4 Thin-Film Encapsulation (TFE) -- 12A.3.4.1 Barrier Layer (Silicon Nitride) -- 12A.3.4.2 Buffer Layer -- References.

Chapter 12B Thin-Film PECVD (Ulvac).

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